Modeling and characterization of SiGe HBT low-frequency noise figures-of-merit for RFIC applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 11 SPEC, 2002, Pages 2467-2473

  Tang, Jin ^a,b   Niu, Guofu ^a,b   Jin, Zhenrong ^a,b,c   Cressler, John D ^a,b,c   Zhang, Shiming ^b   Joseph, Alvin J ^a,d   Harame, David L ^a,d  

^a IEEE   (United States)

^b AUBURN UNIVERSITY   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d IBM MICROELECTRONICS   (United States)

Author keywords

Breakdown voltage; Corner frequency; Cutoff frequency; Device modeling; Flicker noise; Heterojunction bipolar; Low frequency noise; Phase noise; RF integrated circuit (RFIC); SiGe; Transistor (HBT)

Indexed keywords

CUTOFF FREQUENCY; FLICKER NOISE; NOISE CORNER FREQUENCY; PHASE NOISE; RADIO FREQUENCY INTEGRATED CIRCUITS; SILICON GERMANIUM;

CURRENT DENSITY; ELECTRIC BREAKDOWN; FREQUENCIES; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; OPTIMIZATION; OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036853167     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.804519     Document Type: Article

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