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Volumn 149, Issue 1, 2002, Pages 40-50

Low-frequency noise in polysilicon-emitter bipolar transistors

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; FREQUENCIES; HOT CARRIERS; POLYSILICON; SPURIOUS SIGNAL NOISE; STRESS ANALYSIS;

EID: 0036476985     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20020076     Document Type: Conference Paper
Times cited : (28)

References (62)
  • 7
    • 0000534138 scopus 로고
    • Determination of the trap energy levels and emitter area dependence of noise in poly-emitter bipolar junction transistors from generation-recombination noise spectra
    • (1992) Can. J. Phys. , vol.70 , Issue.10-11 , pp. 949-958
    • Ng, A.1    Deen, M.J.2    Ilowski, J.I.3
  • 13
    • 36549102226 scopus 로고
    • Low frequency noise in self-aligned bipolar transistors
    • (1987) J. Appl. Phys. , vol.62 , Issue.4 , pp. 1335-1339
    • Lu, P.F.1
  • 29
    • 0009056863 scopus 로고    scopus 로고
    • High frequency noise modelling and the scaling of the noise parameters of polysilicon emitter bipolar junction transistors
    • (1996) Can. J. Phys. , vol.74
    • Deen, M.J.1
  • 39
    • 0012278046 scopus 로고
    • Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise
    • (1989) Adv. Phys. , vol.38 , Issue.4 , pp. 367-468
    • Kirton, M.J.1    Uren, M.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.