A Complementary BiCMOS Technology with High Speed npn and pnp SiGe:C HBTs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 117-120

  Heinemann, B ^a   Barth, R ^a   Bolze, D ^a   Drews, J ^a   Formanek, P ^a   Fursenko, O ^a   Glante, M ^a   Glowatzki, K ^a   Gregor, A ^a   Haak, U ^a   Hoppner W ^a   Knoll, D ^a   Kurps, R ^a   Marschmeyer, S ^a   Orlowski, S ^a   Rucker H ^a   Schley, P ^a   Schmidt, D ^a   Scholz, R ^a   Winkler, W ^a   Yamamoto, Y ^a   more..

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTION BIPOLAR TRANSISTORS; ION IMPLANTATION; NATURAL FREQUENCIES; OSCILLATIONS; SEMICONDUCTOR DOPING;

STRAIN RELAXATION; VALENCE BAND BARRIERS;

CMOS INTEGRATED CIRCUITS;

EID: 0842331406     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. J. D. Cressler, J. Warnock, D. L. Harame, J. N. Burghartz, K. A. Jenkins, and Ching-Te Chuang, "A high-speed complementary silicon bipolar technology with 12-fJ power-delay product," IEEE Electron. Device Lett., vol. 14, pp. 523-526, 1993.
2. T. Onai, E. Ohue, Y. Idei, M. Tanabe, H. Shimamoto, K. Washio, and T. Nakamura, "Self-aligned complementary bipolar technology for low-power dissipation and ultra-high-speed LSI's," IEEE Trans. Electron Devices, vol. 42, pp. 413-417, 1995.
3. T SiGe HBT with a non-selfaligned structure," IEEE Electron. Device Lett., vol. 22, pp. 542-544, 2001.
4. M. C. Wilson et al., "Process HJ: A 30GHz npn and 20GHz pnp complementary bipolar process for high linearity RF circuits," in Proc. BCTM, p. 164, 1998.
5. W. Klein and Bernd-Ulrich H. Klepser, "75 GHz bipolar production technology for the 21st century," in Proc. ESSDERC, p. 88, 1999.
6. Y.-F. Chyan et al., "A SOGHz 0.25-μm implanted-base high-energy implanted-collector complementary modular BiCMOS (HEICBiC) technology for low-power wireless-communication VLSIs," in Proc. BCTM, p. 128, 1998.
7. D.L. Harame et al., "55 GHz polysilicon-emitter graded SiGe-base PNP transistors," In Proc. VLSI Tech. Dig., p. 71, 1991.
8. y/p-Si HBTs," IEEE Trans. Electron Devices, vol. 50, pp. 425-432, 2003.
9. B. Heinemann et al., "Novel collector design for high-speed SiGe:C HBTs," IEDM Tech. Dig., p. 775, 2002.