Noise performance of a low base resistance 200 GHz SiGe technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 787-790

  Greenberg, D R ^a   Jagannathan, B ^b   Sweeney, S ^c   Freeman, G ^b   Ahlgren, D ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC RESISTANCE; FREQUENCIES; NOISE ABATEMENT; SEMICONDUCTING SILICON COMPOUNDS;

LOW BASE RESISTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036927331     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. M. Regis et al, "Noise behavior in SiGe devices," Solid-State Electronics, v. 45, pp. 1891 -1897, 2001.
3. T in a manufacturable technology," IEEE Electron Dev. Lett., v. 23 n. 5, pp. 258-260, 2002.
4. K. Onodera et al, "Extremely low-noise performance of GaAs MESFETs with wide-head T-shaped gate," IEEE Trans. On Electron Dev., v. 46 n. 2, pp. 310-319, 1999.
5. nd Int. Conf. On Microwave and Millimeter Wave Tech., pp. 56-59, 2000.
6. P.F. Marsh et al, "Low noise metamorphic HEMT devices and amplifiers on GaAs substrates," 1999 IEEE MTT-S Dig., pp. 105-108, 1999.
7. Datasheet, TriQuint Part No. TGF4350.
8. Datasheet, Agilent Part No. ATF-35143.
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