54 GHz fmax implanted base 0.35 μm single-polysilicon bipolar technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 807-810

  Niel, S ^a   Rozeau, O ^a   Ailloud, L ^a   Hernandez, C ^a   Llinares, P ^a   Guillermet, M ^a   Kirtsch, J ^a   Monroy, A ^a   de Pontcharra, J ^a   Auvert, G ^a   Blanchard, B ^a   Mouis, M ^a   Vincent, G ^a   Chantre, A ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; DOUBLE POLYSILICON BIPOLAR PROCESSES; OSCILLATION FREQUENCY;

CIRCUIT OSCILLATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

BIPOLAR TRANSISTORS;

EID: 84886448147     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)