SiGe HBTs with cut-off frequency of 350 GHz

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 771-774

  Rieh, J S ^a   Jagannathan, B ^a   Chen, H ^a   Schonenberg, K T ^a   Angell, D ^a   Chinthakindi, A ^a   Florkey, J ^a   Golan, F ^a   Greenberg, D ^a   Jeng, S J ^a   Khater, M ^a   Pagette, F ^a   Schnabel, C ^a   Smith, P ^a   Stricker, A ^b   Vaed, K ^a   Volant, R ^a   Ahlgren, D ^a   Freeman, G ^a   Stein, K ^a   Subbanna, S ^a   more..

^a IBM MICROELECTRONICS   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); OPTIMIZATION; SILICON ALLOYS; WIRELESS TELECOMMUNICATION SYSTEMS;

BIAS CONDITION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036927963     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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