A new model for the low-frequency noise and the noise level variation in polysilicon emitter BJTs

IEEE Transactions on Electron Devices

Volumn 49, Issue 3, 2002, Pages 514-520

  Sandén, Martin ^a,b,c   Marinov, Ognian ^c   Deen, M Jamal ^a,c   Östling, Mikael ^a,b,c  

^a IEEE   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

Bipolar transistor; Interfacial oxide; Low frequency noise; Noise modeling; Polysilicon emitter

Indexed keywords

INTERFACIAL OXIDES;

POLYSILICON; SILICA; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE;

BIPOLAR TRANSISTORS;

EID: 0036494553     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.987124     Document Type: Article

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