Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 235-236

  Rieh, J S ^a   Khater, M ^a   Schonenberg, K T ^a   Pagette, F ^a   Smith, P ^a   Adam, T N ^a   Stein, K ^a   Ahlgren, D ^a   Freeman, G ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASE RESISTANCE (RB); KIRK EFFECT; SELECTIVELY IMPLANTED COLLECTORS (SIC); SPEED-BREAKDOWN VOLTAGES;

BROADBAND NETWORKS; CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; EXTRAPOLATION; LOCAL AREA NETWORKS; MODULATION; NATURAL FREQUENCIES; OSCILLATIONS; SCHEMATIC DIAGRAMS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 13244259110     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367884     Document Type: Conference Paper

References (2)

1. J.-S. Rieh et al, IEDM Tech. Dig, p. 771, (2002).
2. B. Jagannathan et al, EDL 23(5), p. 258 (2002).