Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 703-706

  Knoll, D ^a   Heinemann, B ^a   Osten, H J ^a   Ehwald, K E ^a   Tillack, B ^a   Schley, P ^a   Barth, R ^a   Matthes, M ^a   Park, Kwang Soo ^a   Kim, Young ^a   Winkler, W ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; GAIN CONTROL; SEMICONDUCTING SILICON COMPOUNDS;

SINGLE-POLYSILICON TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032276830     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)