A 50-GHz static frequency divider and 40-Gb/s MUX/DEMUX using self-aligned selective-epitaxial-growth sige HBTs with 8-ps ECL

IEEE Transactions on Electron Devices

Volumn 48, Issue 7, 2001, Pages 1482-1487

  Washio, Katsuyoshi ^a   Ohue, Eiji ^a   Oda, Katsuya ^a   Hayami, Reiko ^a   Tanabe, Masamichi ^a   Shimamoto, Hiromi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Bipolar transistors; Digital integrated circuits; Emitter coupled logic (ECL); Epitaxial growth; Heterojunctions; Optical communication

Indexed keywords

DEMULTIPLEXING; DIGITAL INTEGRATED CIRCUITS; EPITAXIAL GROWTH; FABRICATION; FREQUENCY DIVIDING CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTICAL COMMUNICATION; OPTICAL LINKS; POLYSILICON;

OSCILLATING FREQUENCIES;

MULTIPLEXING;

EID: 0035395719     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.930673     Document Type: Article

References (15)

1. Si-analog IC's for 20 Gb/s optical receiver
2. 46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology
3. Design consideration for very-high-speed Si-bipolar IC's operating up to 50 Gb/s
4. Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors
5. 130-GHz fT SiGe HBT technology
6. A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay
7. 42GHz static frequency divider in a Si/SiGe bipolar technology
8. 60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measurement technique
9. 60 Gbit/s regenerating demultiplexer in SiGe bipolar technology
10. 40 Gbit/s transimpedance amplifier in SiGe bipolar technology, for the receiver in optical-fiber TDM links
11. T self-aligned selective epitaxial sige HBT with SMI electrodes
12. A 7.7-ps CML using selective-epitaxial sige HBT's
13. Self-aligned metal/IDP bipolar technology featuring 14 ps/70 GHz
14. Self-aligned metal/IDP Si bipolar technology with 12-ps ECL and 45-GHz dynamic frequency divider
15. max over 250 GHz