High-speed SiGe:C bipolar technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 344-347

  Bock J ^a   Schafer H ^a   Knapp, H ^a   Zoschg D ^a   Aufinger, K ^a   Wurzer, M ^a   Boguth, S ^a   Stengl, R ^a   Schreiter, R ^a   Meister, T F ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; FREQUENCIES; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; OSCILLATIONS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

BIPOLAR TECHNOLOGY; DOUBLE POLYSILICON SELF-ALIGNED TRANSISTOR; TRANSIT FREQUENCY;

BIPOLAR TRANSISTORS;

EID: 0035716673     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation
2. Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology
3. max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications
4. SiGe bipolar technology for mixed digital and analogue RF applications
5. max and 11 ps gate delay
6. A 79 GHz dynamic frequency divider in SiGe bipolar technology
7. 2 dB noise figure 10.5 GHz LNA using SiGe bipolar technology
8. 1 V, 1 GHz 64/65 dual modulus divider in bipolar-SOI