Suppression of Boron Outdiffusion in SiGe HBTs by Carbon Incorporation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 249-252

  Lanzerotti, L D ^a   Sturm, J C ^a   Stach, E ^b   Hull, R ^b   Buyuklimanli, T ^c   Magee, C ^c  

^a Princeton University   (United States)

^b University of Virginia   (United States)

^c Evans East   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DIFFUSION; SI-GE ALLOYS; ARSENIC; CARBON; DIFFUSION IN SOLIDS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS;

BORON DIFFUSIONS; C INCORPORATION; CARBON INCORPORATION; EARLY VOLTAGE; OUT-DIFFUSION; SIGE HBTS; SIGE TECHNOLOGY; THERMAL TRANSIENTS; THERMAL-ANNEALING; TRANSIENT ENHANCED DIFFUSION;

CARBON; INTEGRATED CIRCUIT MANUFACTURE;

BORON OUTDIFFUSION; POSTGROWTH IMPLANTATION; TRANSIENT ENHANCED DIFFUSION;

EID: 0030389382     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553577     Document Type: Conference Paper

References (9)

1. A. Schuppen, et. al., IEDM Technical Digest, pp. 743-746, 1995.
2. E . J . Prinz, et. al., IEEE Electron Device Letters, vol. 12, no. 2, pp. 42-44, 1991.
3. E.J. Prinz, et. al., IEDM Technical Digest, pp. 853-856, 1991.
4. J.W. Slotboom, et. al., IEEE Electron Device Letters, vol. 12, no. 9, pp. 486-488, 1991.
5. Pruijmboom, et. al., IEEE Electron Device Letters, vol. 12, no. 7, pp. 357-359, 1991.
6. L.D. Lanzerotti, et. al., IEEE Electron Device Letters, vol. 17, no. 7, pp. 334-337, 1996.
7. T. G nani, et. al., Journal ofElectronic Materials, voi. 24, no. 8, pp. 999-1002, 1995.
8. C A . King, et. al., IEDM Technical Digest, pp. 751-754, 1995.
9. P.A. Stolk, et. al., Appi. Phys. Lett., vol. 66, no. 11, pp. 1370-1372, 1995.