New bipolar figure of merit "fo"

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 128-135

  Gosser, Royal A ^a   Foroudi, Omid ^b   Flanyak, Steven ^b  

^a ANALOG DEVICES INC   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; ELECTRIC RESISTANCE; FEEDBACK; OPTIMIZATION;

EMITTER-BASE (EB) BREAKDOWN;

BIPOLAR TRANSISTORS;

EID: 0036441873     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. "Relevance of ft and fmax for the Speed of Bipolar CE Amplifier Stage", Hurkx IEEE TED May 1997.
2. "High Frequency Characterization of Small Geometry Bipolar Transistors", vanWijnen and Smith, IEEE 1988 BCTM 5.1.
3. Method of "Open-circuit time constants" for analysis of BJT, D'Alamo hand written notes, 1990.
4. "Unilateral Gain of HBT Bipolar Transistors at Microwave Frequencies" Prasad, Lee, Fonstad, IEEE Transactions on Electron Devices, Volume 35, Number 12, December 1988.
5. "Estimating Delay in Switching Circuits", Ashar, IEEE Transactions on Electron Devices, November 1964.