Structural dependence of the thermal resistance of trench-isolated bipolar transistors

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 100-103

  Rieh, J S ^a   Johnson, J ^a   Furkay, S ^a   Greenberg, D ^a   Freeman, G ^a   Subbanna, S ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FABRICATION; HEAT RESISTANCE; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY;

TRENCH-ISOLATED BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0036442355     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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3. D. Walkey, T. Smy, H. Tran, D. Marchesan, and M. Schröter, "Prediction of thermal resistance in trench isolated bipolar device structures," BCTM Tech. Dig., pp. 207-210, 1998.
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5. x HBT's on bulk-Si and SOI substrates," BCTM Tech. Dig., pp. 98-101, 2001.
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8. Kevin Brelsford, Jae-Sung Rich, Ping-Chuan Wang, and Greg Freeman, "Electromigration current limit of high speed SiGe bipolar circuits influenced by device self-heating," Proc. International Integrated Reliability Workshop, pp. 78-82, Oct. 2001.