COM2 SiGe modular BiCMOS technology for digital, mixed-signal and RF applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 145-148

  Carroll, M ^a   Ivanov, T ^a   Kuehne, S ^a   Chu, J ^a   King, C ^a   Frei, M ^a   Mastrapasqua, M ^a   Johnson, R ^a   Ng, K ^a   Moinian, S ^a   Martin, S ^a   Huang, C ^a   Hsu, T ^a   Nguyen, D ^a   Singh, R ^a   Fritzinger, L ^a   Esry, T ^a   Moller, W ^a   Kane, B ^a   Abeln, G ^a   Hwang, D ^a   Orphee, D ^a   Lytle, S ^a   Roby, M ^a   Vitkavage, D ^a   Chesire, D ^a   Ashton, R ^a   Shuttleworth, D ^a   Thoma, M ^a   Choi, S ^a   Lewellen, S ^a   Mason, P ^a   Lai, T ^a   Hsieh, H ^a   Dennis, D ^a   Harris, E ^a   Thomas, S ^a   Gregor, R ^a   Sana, P ^a   Wu, W ^a   more..

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COST EFFECTIVENESS; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STATIC RANDOM ACCESS STORAGE;

EMBEDDED MEMORY;

CMOS INTEGRATED CIRCUITS;

EID: 0034452561     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A 50GHz 0.25μm implanted-base high-energy implanted-collector modular BiCMOS technology for low-power communication VLSIs
2. Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process
3. 1.25 volt, low-cost, embedded FLASH memory for low density applications
4. Integration of high-Q inductors in a latch-up resistant CMOS technology