Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 561-564

  Ehwald, K E ^a   Knoll, D ^a   Heinemann, B ^a   Chang, K ^a   Kirchgessner, J ^a   Mauntel, R ^a   Lim, I S ^a   Steele, J ^a   Schley, P ^a   Tillack, B ^a   Wolff, A ^a   Blum, K ^a   Winkler, W ^a   Pierschel, M ^a   Jagdhold, U ^a   et al , ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; HIGH TEMPERATURE PROPERTIES; MASKS; MOS DEVICES; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICA;

BOLD PRINTED PROCESS; EPI-FREE CMOS PROCESS; LOCAL OXIDATION OF SILICON; MODULAR INTEGRATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033345513     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)