BiCMOS integration of SiGe:C heterojunction bipolar transistors

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 162-166

  Knoll, D ^a   Heinemann, B ^a   Ehwald, K E ^a   Rucker H ^a   Tillack, B ^a   Winkler, W ^a   Schley, P ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; FABRICATION; MICROPROCESSOR CHIPS; MOSFET DEVICES; SEMICONDUCTOR DOPING; X RAY DIFFRACTION;

MODULAR PROCESS INTEGRATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036440040     PISSN: 10889299     EISSN: None     Source Type: Journal    
DOI: 10.1109/BIPOL.2002.1042909     Document Type: Article

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