Wafer level forward current reliability analysis of 120 GHz production SiGe HBTs under accelerated current stress

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 184-188

  Rieh, J S ^a   Watson, K ^a   Guarin, F ^a   Yang, Z ^a   Wang, P C ^a   Joseph, A ^a   Freeman, G ^a   Subbanna, S ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FAILURE (MECHANICAL); HEATING; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS;

CURRENT MODE DEGRADATION; CURRENT STRESSES; WAFER LEVEL RELIABILITY (WLR);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036088087     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. max) HBT and ASIC-compatible CMOS using copper interconnect
2. T SiGe heterojunction bipolar transistor with a non-self-aligned (NSA) structure
3. Submicron AlInAs/InGaAs HBT with 160 GHz f//T at 1 mA collector current
4. High performance, high yield InP DHBT production process for 40 Gbps applications
5. T SiGe technology
6. The SIS tunnel emitter: A theory for emitters with thin interface layers
7. The role of the interfacial layer in polysilicon emitter bipolar transistors
8. The relationship among electro-migration, passivation thickness, and common-emitter current gain degradation within shallow junction NPN bipolar transistors
9. Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors