0.18μm 90 GHz fT SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 569-572

  Freeman, G ^a   Ahlgren, D ^a   Greenberg, D R ^a   Groves, R ^a   Huang, F ^a   Hugo, G ^a   Jagannathan, B ^a   Jeng, S J ^a   Johnson, J ^a   Schonenberg, K ^a   Stein, K ^a   Volant, R ^a   Subbanna, S ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; COPPER; CURRENT DENSITY; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; LITHOGRAPHY; METALLIZING; MICROWAVE CIRCUITS; NATURAL FREQUENCIES; SEMICONDUCTING GERMANIUM;

COPPER INTERCONNECT TECHNOLOGY; COPPER METALLIZATION; KIRK EFFECT; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033325344     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)