Impact of geometrical scaling on low-frequency noise in SiGe HBTs

IEEE Transactions on Electron Devices

Volumn 50, Issue 3, 2003, Pages 676-682

  Jin, Zhenrong ^a   Cressler, John D ^a   Niu, Guofu ^b   Joseph, Alvin J ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

1 f noise; Flicker noise; Generation recombination (G R) noise; Heterojunction bipolar transistor (HBT); Low frequency noise; SiGe HBT; Stress

Indexed keywords

ELECTRIC FREQUENCY MEASUREMENT; GEOMETRY; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL NOISE MEASUREMENT; STATISTICAL METHODS;

FLICKER NOISE; LOW FREQUENCY NOISE; REVERSE-BIAS-EMITTER-BASE STRESS; SILICON GERMANIUM TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037560912     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.810483     Document Type: Article

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