Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 565-568

  King, C A ^a   Frei, M R ^a   Mastrapasqua, M ^a   Ng, K K ^a   Kim, Y O ^a   Johnson, R W ^a   Moinian, S ^a   Martin, S ^a   Cong, H I ^a   Klemens, F P ^a   Tang, R ^a   Nguyen, D ^a   Hsu, T I ^a   Campbell, T ^a   Molloy, S J ^a   et al , ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; LITHOGRAPHY; MOS DEVICES; NATURAL FREQUENCIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DEMULTIPLEXER CIRCUITS; HIGH ENERGY IMPLANTATION; MODULAR BICMOS PROCESS; SUPER SELF ALIGNED TRANSISTOR;

BIPOLAR TRANSISTORS;

EID: 0033312234     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)