Sub 5 ps SiGe bipolar technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 763-766

  Bock J ^a   Schafer H ^a   Knapp, H ^a   Zoschg D ^a   Aufinger, K ^a   Wurzer, M ^a   Boguth, S ^a   Rest, M ^a   Schreiter, R ^a   Stengl, R ^a   Meister, T F ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; FABRICATION; GATES (TRANSISTOR); OSCILLATORS (ELECTRONIC); POLYSILICON; SILICON ALLOYS;

RING OSCILLATORS;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0036930469     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. T in a Manufaoturable Technology", IEEE Electron Device Letters, Vol. 23, No. 5, pp. 258-260, 2002
2. M. Racanelli et al., "Ultra High Speed SiGe NPN for Advanced BiCMOS Technology", IEDM Technical Digest, pp, 336-339, 2001
3. max", IEDM Technical Digest, pp. 332-335, 2001
4. T SiGe HBTs - Expanding the Horizons of SiGe BiCMOS", ISSCC Technical Digest, pp. 180-181, and visuals supplement, pp. 138-139, 2002
5. J. Böck et al., "High-Speed SiGe:C Bipolar Technology", IEDM Technical Digest, pp. 344-347, 2001
6. H. Knapp et al., "A 79 GHz Dynamic Frequency Divider in SiGe Bipolar Technology", ISSCC Technical Digest, pp. 208-209, 2000
7. D. Zöschg et al., "2 dB Noise Figure 10.5 GHz LNA using SiGe Bipolar Technology", Electronics Letters, pp. 2195-2196, 1999