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Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 339-343

Avalanche current induced hot carrier degradation in 200GHz SiGE heterojunction bipolar transistors

(4) Yang, Zhijian a Guarin, Fernando a Hostetter, Ed a Freeman, Greg a

a IBM MICROELECTRONICS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS;

AVALANCHE CURRENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037634474 PISSN: 00999512 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (20)

References (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.