3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay

IEEE Electron Device Letters

Volumn 24, Issue 5, 2003, Pages 324-326

  Jagannathan, Basanth ^a   Meghelli, Mounir ^b   Chan, Kevin ^b   Rieh, Jae Sung ^a   Schonenberg, Kathryn ^a   Ahlgren, David ^a   Subbanna, Seshadri ^a   Freeman, Greg ^a  

^a IBM MICROELECTRONICS   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Germanium; HBTs; High speed devices; Ring oscillators; SiGe; Silicon

Indexed keywords

EMITTER COUPLED LOGIC CIRCUITS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

MINIMUM GATE DELAY; RING OSCILLATOR; S-PARAMETER MEASUREMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0041672436     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812568     Document Type: Article

References (11)

1. J.-S. Rieh et al., "SiGe HBT's with cut-off frequency of 350 GHz," in IEDM Tech. Dig., 2002, pp. 771-774.
2. T in a manufacturable technology," IEEE Electron. Device Lett., vol. 23, pp. 258-260, 2002.
3. R. A. Gosser et al., "New bipolar figure of merit "fo"," in Proc. BCTM, 2002, pp. 128-135.
4. MAX SiGe technology," IEEE Electron Device Lett., vol. 23, pp. 541-543, 2002.
5. J. M. C. Stork, "Bipolar transistor scaling for minimum switching delay and energy dissipation," in IEDM Tech. Dig., 1988, pp. 550-553.
6. T SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications," in IEDM Tech. Dig., 1999, pp. 569-572.
7. J. Bock et al., "High-speed SiGe:C bipolar technology," in IEDM Tech. Dig., 2001, pp. 344-347.
8. E. Ohue et al., "5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT," in Proc. BCTM, 2001, pp. 26-29.
9. M. Sokolich et al., "Demonstration of sub-5 ps CML ring oscillator gate delay with reduced parasitic A1InAs/InGaAs HBT," IEEE Electron Device Lett., vol. 22, pp. 309-311, 2001.
10. MAX and 6.7-ps ECL," IEEE Trans. Electron. Devices., pp. 1989-1994, 2001.
11. J. Böck et al., "Sub 5 ps SiGe bipolar technology," in IEDM Tech. Dig., 2002, pp. 763-766.