0.2-μm self-aligned SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 557-560

  Washio, Katsuyoshi ^a   Kondo, Masao ^a   Ohue, Eiji ^a   Oda, Katsuya ^a   Hayami, Reiko ^a   Tanabe, Masamichi ^a   Shimamoto, Hiromi ^a   Harada, Takashi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL POLISHING; ELECTRIC INDUCTORS; ELECTRODES; EMITTER COUPLED LOGIC CIRCUITS; EPITAXIAL GROWTH; FREQUENCIES; MIM DEVICES; OSCILLATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CHEMICAL MECHANICAL POLISHING; DUAL DEEP TRENCH ISOLATION; GATE DELAY TIME; HIGH-Q INDUCTORS; MIM CAPACITORS; SELF ALIGNED SELECTIVE EPITAXIAL GROWTH; SHALLOW TRENCH ISOLATION; SILICON GERMANIUM; TITANIUM SALICIDE ELECTRODES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033343948     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)