190-GHz fT, 130-GHz fmax SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 139-142

  Kiyota, Yukihiro ^a   Hashimoto, Takashi ^a   Udo, Tsutomu ^a   Kodama, Akihiro ^a   Shimamoto, Hiromi ^a   Hayami, Reiko ^a   Washio, Katsuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEMULTIPLEXING; EPITAXIAL GROWTH; HYDROCHLORIC ACID; LOW TEMPERATURE EFFECTS; MULTIPLEXING; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

CUTOFF FREQUENCIES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036440571     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. T in a manufacturable technology," IEEE Electron Device Lett., 23, p. 258, (2002).
2. M. Racanelli et al., "Ultra high speed SiGe NPN for advanced BiCMOS technology," Tech. Digest of IEDM, p. 336, (2001).
3. J. Bock et al., "High-speed SiGe:C bipolar technology," Tech. Digest of IEDM, p. 344, (2001).
4. Y. Kiyota et al., "HCl-free selective epitaxial SiGc growth by LPCVD for high-frequency HBTs," IEEE Trans. Electron Devices, 49, p. 739, (2002).
5. max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications," IEEE Trans. Electron Devices, 49, p. 271, (2002).
6. T. Masuda et al., "40 Gb/s 4:1 multiplexer and 1:4 demultiplexer IC module using SiGe HBTs," Tech. Digest of IMS, p. 1697, (2001).