Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors

2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001

Volumn , Issue , 2001, Pages 110-113

  Rieh, J S ^a   Greenberg, D ^a   Jagannathan, B ^a   Freeman, G ^a   Subbanna, S ^a  

^a IBM   (United States)

Author keywords

Electrical resistance measurement; Geometry; Germanium silicon alloys; Length measurement; Resistance heating; Silicon germanium; Solid modeling; Temperature; Thermal resistance; Velocity measurement

Indexed keywords

BICMOS TECHNOLOGY; GEOMETRY; GERMANIUM; GERMANIUM ALLOYS; HEAT RESISTANCE; HETEROJUNCTIONS; INTEGRATED CIRCUITS; MONOLITHIC INTEGRATED CIRCUITS; SILICON; SILICON ALLOYS; TEMPERATURE; VELOCITY MEASUREMENT;

ELECTRICAL RESISTANCE MEASUREMENT; GERMANIUM SILICON ALLOY; LENGTH MEASUREMENT; RESISTANCE-HEATING; SILICON GERMANIUM; SOLID MODEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84951942739     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2001.942350     Document Type: Conference Paper

References (8)

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