Effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 803-806

  Osten, H J ^a   Lippert, G ^a   Knoll, D ^a   Barth, R ^a   Heinemann, B ^a   Ruecker, H ^a   Schley, P ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSIENT ENHANCED DIFFUSION (TED);

CARBON; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SOLID STATE OSCILLATORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84886448135     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)