The evolution of the microelectronic bipolar junction transistor

1st Egyptian Workshop on Advancements of Electronic Devices, EWAED 2002

Volumn , Issue , 2002, Pages 2-16

  Zekry, A A ^a  

^a The British University in Egypt   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; ELECTRONIC EQUIPMENT; ION IMPLANTATION; MICROELECTRONICS; RECONFIGURABLE HARDWARE; SEMICONDUCTOR DOPING; TEMPERATURE; THERMOELECTRIC EQUIPMENT; TRANSISTORS;

CIRCUIT PERFORMANCE; COMMUNICATION CIRCUITS; ELECTRICAL PERFORMANCE; HIGH-SPEED TRANSISTORS; ISOLATION TECHNIQUES; LOW TEMPERATURE EPITAXIES; SELF ALIGNED STRUCTURE; VERTICAL DIMENSIONS;

BIPOLAR TRANSISTORS;

EID: 24944479295     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EWAED.2002.1177874     Document Type: Conference Paper

References (6)

1. R.P. Jindal, "Hell's Bells Laboratory", IEEE Trans. On Election Devices, vol.48, no.11, Nov. 2001.
2. Paul R. Gray and Robert G. Meyer, Analysis and Design of Analog Integrated Circuits, John Wiley & Sons, 1993.
3. S.M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, 1981.
4. T.H. Ning, "History and future Perspective of the Modern Silicon Bipolar Transistor". IEEE Trans. on Electron Devices, vol.48, no.11, Nov. 2001.
5. D.L. Harame and S. Meyerson, "The Early History of IBM's SiGe Mixed Technology", IEEE Trans. On Electron Devices, vol.48, no.11, Nov. 2001.
6. M. Shur, Physics of Semiconductor Devices, Printce Hall, 1990.