Wide bandgap semiconductor thin films for piezoelectric and piezoresistive MEMS sensors applied at high temperatures: An overview

Microsystem Technologies

Volumn 20, Issue 1, 2014, Pages 9-21

  Fraga, M A ^a,d   Furlan, H ^a   Pessoa, R S ^b,d   Massi, M ^c,d  

^a FACULDADE DE TECNOLOGIA DE SÃO PAULO   (Brazil)

^b INSTITUTO DE PESQUISA E DESENVOLVIMENTO   (Brazil)

^c FEDERAL UNIVERSITY OF SÃO PAULO   (Brazil)

^d INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE (ALN); CORROSIVE ATMOSPHERE; DEVELOPMENT TECHNOLOGY; INDUSTRIAL COMMUNITIES; MICRO-ELECTRICAL-MECHANICAL SYSTEMS; PIEZORESISTIVE PROPERTIES; SILICON CARBIDES (SIC); WIDE-BAND-GAP SEMICONDUCTOR;

ENERGY GAP; PIEZOELECTRICITY; SILICON CARBIDE; THIN FILMS; ZINC OXIDE;

SENSORS;

EID: 84892579135     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-013-2029-z     Document Type: Review

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