Characterization of n-Type β-SiC as a Piezoresistor

IEEE Transactions on Electron Devices

Volumn 40, Issue 6, 1993, Pages 1093-1099

  Shor, Joseph S ^a   Goldstein, David ^a   Kurtz, Anthony D ^a  

^a Kulite Semiconductor Products Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; PIEZOELECTRIC DEVICES; RESISTORS;

GAUGE FACTOR (GF); N-TYPE SILICON CARBIDE; PIEZORESISTORS; TEMPERATURE COEFFICIENT OF RESISTIVITY (TCR);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0027608849     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.214734     Document Type: Article

References (20)

1. Silicon Carbide-1973, R. C. Marshall, J. W. Faust, and C. E. Ryan, Eds. Columbia, SC: Univ. of SC Press, 1974.
2. M. Kanaya, J. Takahashi, Y. Fuyiwara, and A. Moritani, “Controlled sublimation growth of single-crystalline 4H-SiC and 6H-SiC and identification of polytypes by x-ray diffraction,” Appl. Phys. Lett., vol. 58, pp. 56–58, 1991.
3. S. Nishino, J. A. Powell, and H. A. Will, “Production of large-area single-crystal wafers of cubic SiC for semiconductor devices,” Appl. Phys. Lett., vol. 42, pp. 460–462, 1983.
4. L. G. Matus, J. A. Powell, and C. S. Salupo, “High-voltage 6H-SiC pn-junction diodes,” Appl. Phys. Lett., vol. 59, pp. 1770–1772, 1991.
5. Proc. 4th Int. Conf. on Amorphous and Crystalline SiC (Santa Clara Univ., Santa Clara, CA, Oct. 10–11, 1991), to be published by Springer-Verlag.
6. G. L. Pearson, W. T. Read, Jr., and W. L. Feldman, “Deformation and fracture of small silicon crystal's” Acta Met., vol. 5, pp. 181–191, 1957.
7. I. V. Rapatskaya, G. E. Rudashevskii, M. G. Kasaganova, M. I. Iglitskin, M. B. Reifman, and E. F. Fedotova, “Piezoresistance coefficients of n-type α-SiC,” Sov. Phys.—Solid State, vol. 9, pp. 2833–2835, 1968.
8. G. N. Guk, N. Ya. Usol'tseva V. S. Shadrin, and N. K. Prokop’eva, “Piezoresistance of cubic SIC under hydrostatic compression,” Sov. Phys.—Semicon., vol. 10, pp. 83–84, 1976.
9. C. S. Smith, “Piezoresistance effects in germanium and silicon,” Phys. Rev., vol. 94, pp. 42–49, 1954.
10. J. A. Powell, L. G. Matus, and M. A. Kuczmarski, “Growth and characterization of cubic SiC single-crystal films of Si,” J. Electrochem. Soc., vol. 134, pp. 1558–1565, 1987.
11. Epoxylite Co., Irvine, CA.
12. C. Herring and E. Vogt, “Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering,” Phys. Rev., vol. 101, pp. 944–961, 1956.
13. R. Kaplan, R. J. Wagner, H. J. Kim, and R. F. Davis, “Electron cyclotron resonance in cubic SiC,” Solid-State Commun., vol. 55, pp. 67–69, 1985.
14. Corning Glass Works, Corning, NY.
15. R. W. Keyes, “The effect of elastic deformation on the electrical conductivity of semiconductors,” Solid State Physics 11, F. Seitz and D. Turnbull, Eds. New York: Academic Press, 1960, pp. 149–221.
16. J. A. Freitas, S. G. Bishop, P. E. R. Nordquist, Jr., and M. L. Gipe, “Donor binding energies determined from temperature dependence of photoluminescence spectra in undoped and aluminum doped β-SiC films,” Appl. Phys. Lett., vol. 52, pp. 1695–1697, 1987.
17. D. J. First, A. D. Kurtz, and J. P. A. Pugnaire, US Patent 3 245 252, issued to Kulite-Bytrex Co., Newton, MA.
18. J. S. Shor, X. G. Zhang, and R. M. Osgood, Jr., “Laser-assisted photoelectrochemical etching of n-type β-SiC,” J. Electrochem. Soc., vol. 139, pp. 1213–1216, 1992.
19. J. S. Shor, R. M. Osgood, Jr., and A. D. Kurtz, “Photoelectrochemical conductivity-selective etch stops for SiC,” Appl. Phys. Lett., vol. 60, pp. 1001–1003, 1992.
20. L. Tong, M. Mehregany, and L. G. Matus, Appl. Phys. Lett., vol. 60, p. 2992, 1992.