High temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates

Sensors and Actuators, A: Physical

Volumn 74, Issue 1, 1999, Pages 56-59

  Eickhoff, M ^a   Moller H ^a   Kroetz, G ^a   V Berg, J ^b   Ziermann, R ^b  

^a DAIMLER AG   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DRY ETCHING; SILICON CARBIDE; SUBSTRATES; SURFACES;

HIGH TEMPERATURE PRESSURE SENSOR; SELECTIVE DEPOSITION;

SILICON SENSORS;

EID: 0344146579     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00302-1     Document Type: Article

References (9)

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