Studies on SiC, DLC and TiO 2 thin films as piezoresistive sensor materials for high temperature application

Microsystem Technologies

Volumn 18, Issue 7-8, 2012, Pages 1027-1033

  Fraga, M A ^a,b   Furlan, H ^c   Pessoa, R S ^b,d   Rasia, L A ^e   Mateus, C F R ^a  

^a Institute for Advanced Studies   (Brazil)

^b INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^c FACULDADE DE TECNOLOGIA DE SÃO PAULO   (Brazil)

^d INSTITUTO DE PESQUISA E DESENVOLVIMENTO   (Brazil)

^e UNIVERSIDADE REGIONAL DO NOROESTE DO ESTADO DO RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE MATERIALS; DEVICE INTEGRATION; DIAMOND-LIKE CARBON; DIFFERENT SUBSTRATES; GAUGE FACTORS; HARSH ENVIRONMENT; HIGH TEMPERATURE; LOW COST FABRICATION; MICROFABRICATION PROCESS; NITROGEN-DOPED; PIEZORESISTIVE PROPERTIES; PIEZORESISTIVE SENSORS; PIEZORESISTOR; PRELIMINARY ANALYSIS; SENSING ELEMENTS; STANDARD CMOS TECHNOLOGY; SYSTEM COMPLEXITY; TIO;

CMOS INTEGRATED CIRCUITS; FACTOR ANALYSIS; SENSORS; SILICON CARBIDE; THIN FILMS; TITANIUM DIOXIDE; VAPOR DEPOSITION;

DEPOSITION;

EID: 84864615980     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-012-1435-y     Document Type: Conference Paper

References (36)

1. Arshak A, Arshak K, Morris D, Korostynska O, Jafer E (2005) Investigation of TiO2 thick film capacitors for use as strain gauge sensors. Sens Actuators A 122:242-249. doi:10.1016/j.sna.2005. 06.004
2. Arshak K, Morris D, Arshak A, Korostynska O (2006) Development of high sensitivity oxide based strain gauges and pressure sensors. J Mater Sci Mater Electron 17:767-778. doi: 10.1007/s10854-006-0013-4
3. Arshak K, Morris D, Arshak A, Korostynska O, Kaneswaran K (2007) Development of oxide thick film capacitors for a real time pressure monitoring system. Mater Sci Eng C 27:1406-1410. doi:10.1016/j.msec.2006.06.003
4. Aslam M, Taher I, Masood A, Tamor MA, Potter TJ (1992) Piezoresistivity in vapor-deposited diamond films. Appl Phys Lett 60:2923-2925. doi:10.1063/1.106821
5. Atwell AR, Okojie RS, Kornegay KT, Roberson SL, Beliveau A (2003) Simulation, fabrication and testing of bulk micromachined 6HSiC high-g piezoresistive accelerometers. Sens Actuators A Phys 104:11-18. doi:10.1016/S0924-4247(02)00436-3
6. Chen J, Zhang J, Xian Y, Ying X, Liu M, Jin L (2005) Preparation and application of TiO2 photocatalytic sensor for chemical oxygen demand determination in water research. Water Res 39:1340-1346. doi:10.1016/j.watres. 2004.12.045
7. Dighavkar C, Patil A, Patil S, Borse R (2010) Al-doped TiO2 thick film resistors as H2S gas sensor. Sens Transducers J 9:39-47
8. Eickhoff M, Möller M, Kroetz G, Stutzmann M (2004) Piezoresistive properties of single crystalline, polycrystalline and nanocrystalline n-type 3C-SiC. J Appl Phys 96:2872-2877. doi:10.1063/ 1.1775052
9. Fraga MA (2011) Comparison between the piezoresistive properties of a-SiC films obtained by PECVD and magnetron sputtering. Mater Sci Forum 679-680:217-220. doi:10.4028/www.scientific.net/ MSF.679-680.217
10. Fraga MA, Furlan H, Massi M, Oliveira IC (2010) Effect of nitrogen doping on piezoresistive properties of a-SixCy thin film strain gauges. Microsyst Technol 16:925-930. doi:10.1007/s00542-010-1033-9
11. Fraga MA, Massi M, Furlan H, Oliveira IC, Rasia LA, Mateus CFR (2011a) Preliminary evaluation of the influence of the temperature on the performance of a piezoresistive pressure sensor based on a-SiC film. Microsyst Technol 17:477-480. doi: 10.1007/s00542-011-1244-8
12. Fraga MA, Furlan H, Pessoa RS (2011b) Comparison among performance of strain sensors based on different semiconductor thin films. Proc SPIE. doi:10.1117/12.886624
13. George T, Son KA, Powers RA, Del Castillo LY, Okojie R (2005) Harsh environment microtechnologies for NASA and terrestrial applications. Proc IEEE Sens. doi:10.1109/ICSENS.2005.1597934
14. Gurbuz Y, Esame O, Tekin I, Kang WP, Davidson JL (2005) Diamond semiconductor technology for RF device applications. Solid State Electron 49:1055-1070. doi:10.1016/j.sse.2005.04. 005
15. Hollander LE, Diesel TJ, Vick GL (1960) Piezoresistivity in the oxide semiconductor rutile (TiO2). Phys Rev 117:1469-1472. doi: 10.1103/PhysRev.117. 1469
16. Krauss AR, Auciello O, Gruen DM, Jayatissa A, Sumant A, Tucek J, Mancini DC, Moldovan N, Erdemir A, Ersoy D, Gardos MN, Busmann HG, Meyer EM, Ding MQ (2001) Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices. Diam Relat Mater 10:1952-1961. doi:10.1016/S0925-9635(01) 00385-5
17. Malhaire C, Barbier D (2003) Design of a polysilicon-on-insulator pressure sensor with original polysilicon layout for harsh environment. Thin Solid Films 427:362-366. doi:10.1016/ S0040-6090(02)01234-8
18. Mehregany M, Zorman CA, Rajan N, Chien Hung Wu (1998) Silicon carbide MEMS for harsh environments. Proc IEEE 86:1594-1609. doi:10.1109/5.704265
19. Meškinis Š , Gudaitis R, Kopustinskas V, Tamulevičius S (2008) Electrical and piezoresistive properties of ion beam deposited DLC films. Appl Surf Sci 254:5252-5256. doi:10.1016/j.apsusc. 2008.02.037
20. Meškinis S ̌ , Gudaitis R, Kopustinskas V, Tamulevičius S, Šlapikas K (2010) Piezoresistive, optical and electrical properties of diamond like carbon and carbon nitride films. Diam Relat Mater 19:1249-1253. doi:10.1016/j.diamond.2010.06.008
21. Ned AA, Okojie RS, Kurtz AD (1998) 6H-SiC pressure sensor operation at 600°C. In: Fourth international high temperature electronics conference. doi:10.1109/HITEC.1998.676799
22. Okojie RS, Atwell AR, Kornegay KT, Roberson SL, Beliveau A (2002) Design considerations for bulk micromachined 6H-SiC high-G piezoresistive accelerometers. In: The fifteenth IEEE international conference on micro electro mechanical systems 1:618-622. doi:10.1109/MEMSYS.2002.984347
23. Okojie RS, Lukco D, Blaha C, Nguyen V, Savrun E (2010) Zero offset drift suppression in SiC pressure sensors at 600°C. IEEE Sens. doi:10.1109/ICSENS.2010.5690714
24. Peiner E, Tibrewala A, Bandorf R, Biehl S, Lüthje H, Doering L (2006) Micro force sensor with piezoresistive amorphous carbon strain gauge. Sens Actuators A 130-131:75-82. doi:10.1016/ j.sna.2005.11.059
25. Peiner E, Tibrewala A, Bandorf R, Lüthje H, Doering L, Limmer W (2007) Diamond-like carbon for MEMS. J Micromech Microeng 17:S83. doi:10.1088/0960-1317/17/7/S04
26. Reichert W, Obermeier E, Stoemenos J (1997) b-SiC films on SOI substrates for high temperature applications. Diam Relat Mater 6:1448-1450. doi:10.1016/S0925-9635(97)00078-2
27. Sarro PM (2000) Silicon carbide as a new MEMS technology. Sens Actuators A Phys 82:210-218. doi:10.1016/S0924-4247(99) 00335-0
28. Schultes G, Frey P, Goettel D, Freitag-Weber O (2006) Strain sensitivity of nickel-containing amorphous hydrogenated carbon (Ni:a-C:H) thin films prepared by r.f. sputtering using substrate bias conditions. Diam Relat Mater 15:80-89. doi:10.1016/ j.diamond.2005.07.005
29. Stamate MD (2003) On the dielectric properties of dc magnetron TiO2 thin films. Appl Surf Sci 218:318-323. doi:10.1016/S0169-4332(03)00624-X
30. Takeno T, Miki H, Sugawara T, Hoshi Y, Takagi T (2008) A DLC/WDLC multilayered structure for strain sensing applications. Diam Relat Mater 17:713-716. doi:10.1016/j.diamond.2007.10.005
31. Tan W, Chen J, Zhou X, Zhang J, Lin Y, Li X, Xiao X (2009) Preparation of nanocrystalline TiO2 thin film at low temperature and its application in dye-sensitized solar cell. J Solid State Electrochem 13:651-656. doi:10.1007/s10008-008-0605-4
32. Tibrewala A, Peiner E, Bandorf R, Biehl S, Lüthje H (2007) Longitudinal and transversal piezoresistive effect in hydrogenated amorphous carbon films. Thin Solid Films 515:8028-8033. doi:10.1016/j.tsf.2007.03.046
33. Wang R, Ko WH, Young DJ (2005) Silicon-carbide MESFET-based 400©C MEMS sensing and data telemetry. IEEE Sens J 5:1389-1394. doi:10.1109/JSEN.2005. 858927
34. Wu CH, Stefanescu S, Kuo HI, Zorman CA, Mehregany M (2001) Fabrication and Testing of Single Crystalline 3C-SiC Piezoresistive Pressure Sensors. In: Proceedings of the 11th international conference on solid-state sensors and actuators
35. Yeung KW, Ong CW (2007) Micro-pressure sensors made of indium tin oxide thin films. Sens Actuators A Phys 137:1-5. doi: 10.1016/j.sna.2007.01.012
36. Zhang M, Lin G, Dong C, Wen L (2007) Amorphous TiO2 films with high refractive index deposited by pulsed bias arc ion plating. Surf Coat Technol 201:7252-7258. doi:10.1016/j.surfcoat.2007. 01.043