메뉴 건너뛰기




Volumn 130-131, Issue SPEC. ISS., 2006, Pages 397-402

Temperature dependence of piezoelectric properties of sputtered AlN on silicon substrate

Author keywords

AlN; Aluminum nitride; d33; Piezoelectric coefficient; Piezoelectric uni morph actuator; Scanning laser Doppler vibrometer

Indexed keywords

DOPPLER EFFECT; PIEZOELECTRIC DEVICES; SILICA; SILICON; THERMAL EFFECTS;

EID: 33745854424     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.12.047     Document Type: Article
Times cited : (30)

References (11)
  • 1
    • 0028342311 scopus 로고
    • Materials for high-temperature acoustic and vibration sensors-a review
    • Turner R.C., Fuierer P.A., Newnham R.E., and Shrout T.R. Materials for high-temperature acoustic and vibration sensors-a review. Appl. Acoust. 41 (1994) 299-324
    • (1994) Appl. Acoust. , vol.41 , pp. 299-324
    • Turner, R.C.1    Fuierer, P.A.2    Newnham, R.E.3    Shrout, T.R.4
  • 2
    • 0028404430 scopus 로고
    • Oxygen enrichment at inversion domain boundaries in aluminum nitride-influence on thermal-conductivity
    • Sternitzke M., and Muller G. Oxygen enrichment at inversion domain boundaries in aluminum nitride-influence on thermal-conductivity. J. Am. Ceram. Soc. 77 (1994) 737-742
    • (1994) J. Am. Ceram. Soc. , vol.77 , pp. 737-742
    • Sternitzke, M.1    Muller, G.2
  • 3
    • 0025516671 scopus 로고
    • Aluminum nitride-a versatile but challenging material
    • Sheppard L.M. Aluminum nitride-a versatile but challenging material. Am. Ceram. Soc. Bull. 69 (1990) 1801-1812
    • (1990) Am. Ceram. Soc. Bull. , vol.69 , pp. 1801-1812
    • Sheppard, L.M.1
  • 5
    • 0035356644 scopus 로고    scopus 로고
    • Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering
    • Dubois M.-A., and Muralt P. Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering. J. Appl. Phys. 89 11 (2001) 6389-6395
    • (2001) J. Appl. Phys. , vol.89 , Issue.11 , pp. 6389-6395
    • Dubois, M.-A.1    Muralt, P.2
  • 6
    • 0029373397 scopus 로고
    • Multifunction of aluminum nitride thin-films deposited on mosi2 substrates-ceramic skin
    • Akiyama M., Nonaka K., Shobu K., and Watanabe T. Multifunction of aluminum nitride thin-films deposited on mosi2 substrates-ceramic skin. J. Ceram. Soc. Jpn. 103 (1995) 974-976
    • (1995) J. Ceram. Soc. Jpn. , vol.103 , pp. 974-976
    • Akiyama, M.1    Nonaka, K.2    Shobu, K.3    Watanabe, T.4
  • 7
    • 0029386386 scopus 로고
    • Crystal orientation and piezoelectricity of AlN thin films prepared on polycrystalline substrates
    • Akiyama M., Nonaka K., Shobu K., and Watanabe T. Crystal orientation and piezoelectricity of AlN thin films prepared on polycrystalline substrates. J. Ceram. Soc. Jpn. 103 (1995) 1093-1096
    • (1995) J. Ceram. Soc. Jpn. , vol.103 , pp. 1093-1096
    • Akiyama, M.1    Nonaka, K.2    Shobu, K.3    Watanabe, T.4
  • 8
    • 0004799220 scopus 로고
    • Disk hydrogen plasma assisted chemical vapor-deposition of aluminum nitride
    • Sheng T.Y., Yu Z.Q., and Collins G.J. Disk hydrogen plasma assisted chemical vapor-deposition of aluminum nitride. Appl. Phys. Lett. 52 7 (1988) 576-578
    • (1988) Appl. Phys. Lett. , vol.52 , Issue.7 , pp. 576-578
    • Sheng, T.Y.1    Yu, Z.Q.2    Collins, G.J.3
  • 9
    • 19944397715 scopus 로고
    • Measurement of piezoelectric coefficients of ferroelectric thin-films
    • Lefki K., and Dormans G.J.M. Measurement of piezoelectric coefficients of ferroelectric thin-films. J. Appl. Phys. 76 (1994) 1764-1767
    • (1994) J. Appl. Phys. , vol.76 , pp. 1764-1767
    • Lefki, K.1    Dormans, G.J.M.2
  • 10
    • 0034156317 scopus 로고    scopus 로고
    • Quantitative ferroelectric characterization of single submicron grains in bi-layered perovskite thin films
    • Harnagea C., Pignolet A., Alexe M., Hesse D., and Gosele U. Quantitative ferroelectric characterization of single submicron grains in bi-layered perovskite thin films. Appl. Phys. A70 (2000) 261-267
    • (2000) Appl. Phys. , vol.A70 , pp. 261-267
    • Harnagea, C.1    Pignolet, A.2    Alexe, M.3    Hesse, D.4    Gosele, U.5
  • 11
    • 0000726414 scopus 로고    scopus 로고
    • Piezoelectric coefficient of aluminum nitride and gallium nitride
    • Lueng C.M., Chan H.L.W., Surya C., and Choy C.L. Piezoelectric coefficient of aluminum nitride and gallium nitride. J. Appl. Phys. 88 (2000) 5360-5363
    • (2000) J. Appl. Phys. , vol.88 , pp. 5360-5363
    • Lueng, C.M.1    Chan, H.L.W.2    Surya, C.3    Choy, C.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.