Argon incorporation on silicon carbide thin films deposited by bias co-sputtering technique

Materials Research Society Symposium Proceedings

Volumn 1433, Issue , 2012, Pages 101-106

  Medeiros, H S ^a   Pessoa, R S ^a,b   Fraga, M A ^a,c   Santos, L V ^a,b   Maciel, H S ^a,b   Massi, M ^a   Da Silva Sobrinho, A S ^a  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b INSTITUTO DE PESQUISA E DESENVOLVIMENTO   (Brazil)

^c INSTITUTE FOR ADVANCED STUDIES   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CO-SPUTTERING TECHNIQUES; DC MAGNETRON CO-SPUTTERING; ELECTRICAL AND MECHANICAL PROPERTIES; ELECTRICAL RESISTIVITY; FOUR-POINT PROBE METHOD; SILICON CARBIDE THIN FILM; SILICON CARBIDES (SIC); SUBSTRATE BIAS VOLTAGES;

DEPOSITS; ELECTRIC CONDUCTIVITY; MECHANICAL PROPERTIES; RAMAN SPECTROSCOPY; THIN FILMS;

SILICON CARBIDE;

EID: 84879268283     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2012.1147     Document Type: Conference Paper

References (20)

1. M. A. Fraga, R. S. Pessoa, H. S. Maciel, M. Massi, Recent developments on silicon carbide thin films for piezoresistive sensors applications. In: Moumita Mukherjee (Org.). Silicon Carbide - Materials, Processing and Applications in Electronic Devices: Intech - Open Acess Publisher, 1 (2011) 369-388.
2. T.D. Moustakas, Solar Energy Materials, 8 (1982) 187-204.
3. J.M.T. Pereira, P.K. Banerjee, S.S. Mitra, Thin Solid Films, 127 (1985) 337-350.
4. M. A. Fraga, M. Massi, I. C. Oliveira, H. S. Maciel, S. G. dos Santos Filho, R. D. Mansano, J. Mater. Sci.: Mater Electron 19 (2008) 835-840.
5. H.S. Medeiros, R.S. Pessoa, J.C. Sagás, M.A. Fraga, L.V. Santos, H.S. Maciel, M. Massi, A.S. da Silva Sobrinho, M.E.H. Maia da Costa, Surface & Coatings Technology, 206 (2011) 1787-1795.
6. G.Wang, Bo Wang, A. Huang, M. Zhu, B. Wang, H. Yan Journal Vacuum Science Technology A 21(6) (2003) 1993-1995.
7. A. M. Wrobel, I. Blaszczyk-Lezak, A. Walkiewicz-Pietrzykowska, T. Aoki, J. Kulpinskic, Journal of the Electrochemical Society 155 (2008) 66-76.
8. J. S. Pan, A. T. S. Wee, C. H. A. Huan, H. S. Tan, and K. L. Tan, J. Appl. Phys. 79 (6), (1996) 2934-2941.
9. H.S. Medeiros, R.S. Pessoa, J.C. Sagás, M.A. Fraga, L.V. Santos, H.S. Maciel, M. Massi, A.S. da Silva Sobrinho, Materials Science Forum 717-720 (2012) 197-201.
10. H.S. Medeiros, R.S. Pessoa, J.C. Sagás, L.V. Santos, H.S. Maciel, A.S. da Silva Sobrinho, M. Massi, IX Encontro da SBPMat, 2010, Ouro Preto-MG, Brazil.
11. L. R. Dolittle, Nucl. Instrum. Methods Phys. Res. B 9 (1985) 344-351.
12. W.C. Oliver, G.M. Pharr, J. Mater. Res. 7 (1992) 1564.
13. V. Kulikovsky, V. Vorlícek, P. Bohác, M. Stranyánek, R. Ctvrtlík, A. Kurdyumov, L. Jastrabik, Surf. Coat. Technol. 202 (2008) 1738-1745.
14. H. Harima, Microelectronic Engineering 83 (2006) 126-129.
15. D. B. Dimitrov, D. Papadimitriou, G. Beshkov, Diamond and Related Materials 8 (1999) 1148-1151.
16. B. P. Swain, R. O. Dusane, Materials Letters 61 (2007) 4731-4734.
17. A. C. Ferrari, J. Robertson, Phys. Rev. B 61(20) (2003) 433.
18. V. Kulikovsky, V. Vorlíček, P. Boháč, M. Stranyánek, R. Čtvrtlík, A. Kurdyumov, L. Jastrabik, Surf. Coat. Technol. 202 (2008) 1738-1745.
19. A.K Costa, S.S Camargo Jr., Surf. Coat. Technol. 163-164 (2003) 176-180.
20. S. Ulrich, T. Theel, J. Schwan, H. Ehrhardt, Surf. Coat. Technol. 97 (1997) 45-59.