Piezoresistivity and electrical conductivity of SiC thin films deposited by high temperature PECVD

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 657-660

  Jakovlev, Oleg ^a   Fuchs, Tino ^a   Rohlfing, Franziska ^a   Seidel, Helmut ^b  

^a ROBERT BOSCH GMBH   (Germany)

^b SAARLAND UNIVERSITY   (Germany)

Author keywords

Gauge factor; Harsh environment; High temperature; MEMS; PECVD; Piezoresistivity; Pressure sensor; Silicon carbide

Indexed keywords

DEPOSITION; MEMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE SENSORS; SILICON CARBIDE; SILICON OXIDES; SILICON WAFERS; TENSILE STRAIN;

ELECTRICAL CONDUCTIVITY; FOUR-POINT BENDING METHOD; GAUGE FACTORS; HARSH ENVIRONMENT; HIGH TEMPERATURE; OXIDIZED SILICON WAFERS; PIEZORESISTIVITY; SILICON CARBIDE THIN FILM;

THIN FILMS;

EID: 84874033362     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.657     Document Type: Conference Paper

References (4)

1. R. Riedel et al., Journal of the American Ceramic Society 93 (2010) 920-924.
2. L. An et al., Journal of the American Ceramic Society 91 (2008) 1346-1349.
3. R. Raj et al., Journal of the European Ceramic Society 30 (2010) 2203-2207.
4. M. A. Fraga et al., Microsystem Technologies 16 (2010) 925-930.