High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 576-578

  Ziermann, R ^a   Von Berg, J ^a   Obermeier, E ^a   Wischmeyer, F ^b   Niemann, E ^b   Moller H ^b   Eickhoff, M ^b   Krotz G ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

High temperature pressure sensor; SOI; Thermistor; SiC

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; MICROPROCESSOR CHIPS; PIEZOELECTRIC TRANSDUCERS; POLYCRYSTALLINE MATERIALS; PRESSURE TRANSDUCERS; SEMICONDUCTING FILMS; SILICON CARBIDE; SILICON SENSORS; SILICON WAFERS; SINGLE CRYSTALS; THERMISTORS;

HIGH TEMPERATURE PRESSURE SENSORS; SILICON CARBIDE ON SILICON ON INSULATOR TECHNOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

HIGH TEMPERATURE APPLICATION;

EID: 0033618669     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00477-2     Document Type: Article

References (7)

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4. J. Strass, M. Eickhoff, G. Kroetz, Transducers'97, Chicago, USA, Vol. 2, pp. 1439-1442.
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7. F. Wischmeyer, W. Wondrak, D. Leidich, E. Niemann, CVD Growth of 3C-SiC on SOI(100) Substrates with Optimized Interface Structure, in: ECSCRM'98, Montpellier, France, Mat. Sci. Eng. B61-62 (1999) 563-566.