SCOPUS 정보 검색 플랫폼

Volumn 19, Issue 5, 2006, Pages 34-39

Sensing the extreme

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; JET ENGINES; MASS SPECTROMETERS; SEMICONDUCTOR DEVICES; TEMPERATURE DISTRIBUTION;

BANDGAP; COMPLEX CIRCUITS; DATA COLLECTION; SEMICONDUCTOR SENSORS;

SENSORS;

EID: 33646801979 PISSN: 09538585 EISSN: None Source Type: Trade Journal
DOI: 10.1088/2058-7058/19/5/34 Document Type: Review

Times cited : (5)

References (9)

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- G Bertuccio 2004 Silicon carbide for high resolution X-ray detectors operating up to 100°C Nucl. Instrum. Methods A 522 413-419
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- Bertuccio, G.¹

2
- 29044450430
- Fast and robust gas identification system using an integrated gas sensor technology and Gaussian mixture models
- S Brahim-Belhouari 2005 Fast and robust gas identification system using an integrated gas sensor technology and Gaussian mixture models IEEE Sensors J. 5 1433-1444
- (2005) IEEE Sensors J. , vol.5 , pp. 1433-1444
- Brahim-Belhouari, S.¹

3
- 0343006655
- SiC-based gas sensor development
- G W Hunter 2002 SiC-based gas sensor development Mater. Sci. Forum 338-342 1439-1442
- (2002) Mater. Sci. Forum , vol.338-342 , pp. 1439-1442
- Hunter, G.W.¹

4
- 2942658658
- Electrical characterization of carbon monoxide sensitive high temperature sensor diode based on catalytic metal gate-insulator-silicon carbide structure
- S Nakagomi 2002 Electrical characterization of carbon monoxide sensitive high temperature sensor diode based on catalytic metal gate-insulator-silicon carbide structure IEEE Sensors J. 2 379-386
- (2002) IEEE Sensors J. , vol.2 , pp. 379-386
- Nakagomi, S.¹

5
- 1542627563
- Response mechanism of SiC-based MOS field-effect gas sensors
- J Schalwig 2002 Response mechanism of SiC-based MOS field-effect gas sensors IEEE Sensors J. 2 394-402
- (2002) IEEE Sensors J , vol.2 , pp. 394-402
- Schalwig, J.¹

6
- 0343374873
- Moving gas outlets for the evaluation of fast gas sensors
- P Tobias 1999 Moving gas outlets for the evaluation of fast gas sensors Sensors and Actuators B 58 389-393
- (1999) Sensors and Actuators B , vol.58 , pp. 389-393
- Tobias, P.¹

7
- 3042810377
- Interface states in high-temperature gas sensors based on silicon carbide
- P Tobias 2003 Interface states in high-temperature gas sensors based on silicon carbide IEEE Sensors J. 3 543-547
- (2003) IEEE Sensors J. , vol.3 , pp. 543-547
- Tobias, P.¹

8
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- Evaluation of on-line flue gas measurements by MISiCFET and metal-oxide sensors in boilers
- L Uneus 2005 Evaluation of on-line flue gas measurements by MISiCFET and metal-oxide sensors in boilers IEEE Sensors J. 5 75-81
- (2005) IEEE Sensors J. , vol.5 , pp. 75-81
- Uneus, L.¹

9
- 0038690319
- Using a MISiCFET device as a cold start sensor
- H Wingbrant 2003 Using a MISiCFET device as a cold start sensor Sensors and Actuators B 93 295-303
- (2003) Sensors and Actuators B , vol.93 , pp. 295-303
- Wingbrant, H.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.