Fabrication and characterization of a SiC/SiO2/Si piezoresistive pressure sensor

Procedia Engineering

Volumn 5, Issue , 2010, Pages 609-612

  Fraga, M A ^a,c   Furlan, H ^b   Massi, M ^a   Oliveira, I C ^a   Koberstein, L L ^b  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b FACULDADE DE TECNOLOGIA DE SÃO PAULO   (Brazil)

^c Institute for Advanced Studies   (Brazil)

Author keywords

Amorphous films; Piezoresistive properties; Pressure sensors; Silicon carbide

Indexed keywords

ALUMINA; AMORPHOUS FILMS; AMORPHOUS SILICON; DIAPHRAGMS; PRESSURE SENSORS; REACTIVE ION ETCHING; SILICONES;

ALUMINA SUBSTRATES; FABRICATION AND CHARACTERIZATIONS; LITHOGRAPHIC MASK; MICROMACHINED SILICON; PIEZORESISTIVE PRESSURE SENSORS; PIEZORESISTIVE PROPERTIES; THERMALLY OXIDIZED; WHEATSTONE BRIDGES;

SILICON CARBIDE;

EID: 78650598348     PISSN: None     EISSN: 18777058     Source Type: Conference Proceeding    
DOI: 10.1016/j.proeng.2010.09.183     Document Type: Conference Paper

References (5)

1. J. Du, D. J. Young, C. A. Zorman, and W. H. Ko, "Single Crystal SiC Capacitive Pressure Sensor at 400° C," Technical Digest, International Electron Devices Meeting, pp. 783-786, (2003).
2. R. S. Okojie, A. A. Ned, A. D. Kurtz and W. N. Carr, " Characterization of Highly Doped n- and p- Type 6H-SiC Piezoresistors", IEEE Transactions on Electron Devices, Vol. 45, (1998).
3. C.H. Wu, S. Stefanescu, H. I. Kuo, C. A. Zorman, M. Mehregany, "Fabrication and Testing of Single Crystalline 3C-SiC Piezoresistive Pressure Sensors", The 11th International Conference on Solid-State Sensors and Actuators, Munich, Transducers'01, ( 2001).
4. S. Zappe, J. Franklin, E. Obermeier, M. Eickhoff, H. Möller, G. Krötz, C. Rougeot, O. Lefort, J. Stoemenos, "High Temperature 10 Bar Pressure Sensor Based on 3C-SiC/SOI for Turbine Control Applications", 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, (2000).
5. L. F. Fuller and S. Sudirgo, "Bulk Micromachined Pressure Sensor", Proceedings of IEEE, (2002).