Influence of the PZT film thickness on the structure and electrical properties of the ZnO/PZT heterostructure

Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 1, 2013, Pages 160-165

  Meng, Xiangqin ^a   Yang, Chengtao ^a   Chen, Qingqing ^a   Yang, Jiancang ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK FREE; PREFERRED ORIENTATIONS; RADIO FREQUENCY REACTIVE MAGNETRON SPUTTERING; RELATIVE DIELECTRIC CONSTANT; SURFACE MICROSTRUCTURES; UNIFORM MICROSTRUCTURE; ZNO; ZNO FILMS;

ATOMIC FORCE MICROSCOPY; DIELECTRIC LOSSES; FILM THICKNESS; METALLIC FILMS; MICROSTRUCTURE; THICK FILMS; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84871960835     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-012-1004-2     Document Type: Article

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