Room-temperature r.f. magnetron sputtered ZnO for electromechanical devices

Sensors and Actuators, A: Physical

Volumn 58, Issue 3, 1997, Pages 229-235

  Barker, Anthony ^a,c   Crowther, Simon ^a   Rees, David ^b  

^a Gems/TransInstruments   (United Kingdom)

^b BRUNEL UNIVERSITY   (United Kingdom)

^c SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Electromechanical devices; Piezoelectric thin films; R.f. magnetron sputtering; Zinc oxide

Indexed keywords

ALUMINUM; ELECTROMECHANICAL DEVICES; GLASS; PIEZOELECTRIC MATERIALS; STAINLESS STEEL; SUBSTRATES; THERMAL EXPANSION; THIN FILMS; ZINC OXIDE;

GLASS WAFERS;

MAGNETRON SPUTTERING;

EID: 0031081869     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(96)01430-6     Document Type: Article

References (14)

1. P. Souletie and B.W. Wessels, Growth kinetics of ZnO prepared by organometallic chemical vapour deposition, J. Mater. Res., 3 (1988) 740.
2. H.H.P. Th. Bekman, K.W. Benoist and J.L. Joppe, Post-deposition annealing of RF-sputtered zinc-oxide films, Appl. Surface Sci., 70/71 (1993) 347-350.
3. F.R. Blom, F.C.M. Van de Pol, G. Bauhuis and Th.J.A. Popma, R.F. planar magnetron sputtered ZnO films II: electrical properties, Thin Solid Films, 204 (1991) 365-376.
4. A.V. Mel'nichuk, L.Yu. Mel'nichuk and Yu.A. Pasrchnik, Anisotropy of the electrophysical properties of zinc oxide single crystals, Phys. Solid State, 36 (1994) 1430-1435.
5. H.K. Kim, W. Kleemeier, Y. Li and D.W. Langer, Thin-film induced stress in GaAs ridge-waveguide structures integrated with sputter-deposited ZnO films, J. Vac. Sci. Technol., B12 (1994) 1328-1332.
6. M.J. Vellekoop, C.C.G. Visser, P.M. Sarro and A. Venema, Compatibility of zinc oxide with silicon IC processing, Sensors and Actuators, A21-A23 (1990) 1027-1030.
7. 2) on Si substrates, J. Appl. Phys., 49 (1978) 2423.
8. C.C. Wu, L. Shyu, T. Shyy, D.J. Cheng, C.T. Kao and J.Y. Perng, Effects of RF magnetron sputtered parameters on ZnO film's properties, MRL Bull. Res. Dev., 5 (1991) 61-64.
9. 2 thin buffer layer, J. Electron. Mater., 22 (1993) 267-273.
10. M.B. Bever (ed.), Encyclopaedia of Materials Science and Engineering, Pergamon Press, Oxford, 1986.
11. N. Sakagami, Hydrothermal growth and characterization of ZnO single crystals of high purity, J. Crystal Growth, 99 (1990) 905-909.
12. T. Yamamoto, T. Shiosaki and A. Kawabata, Characterization of ZnO piezoelectric films prepared by rf planar-magnetron sputtering, J. Appl. Phys., 51 (1980) 3113-3120.
13. F.R. Blom, D.J. Yntema, F.C.M. Van de Pol, M. Elwenspoek, J.H.J. Fluitman and Th.J.A. Popma. Thin-film ZnO as micromechanical actuator at low frequencies, Sensors and Actuators, A21-A23 (1990) 226-228.
14. C.J. Van Mullen, F.R. Blom, J.H.J. Fluitman and M. Elwenspoek, Piezoelectrically driven silicon beam force sensor, Sensors and Actuators A, 25-27 (1991) 379-383.