Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

Microelectronics Reliability

Volumn 52, Issue 1, 2012, Pages 39-70

  Grasser, Tibor ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; BASIC PRINCIPLES; BIAS TEMPERATURE INSTABILITY; CHARGE TRANSFER MECHANISMS; COMPLEX DEFECTS; CONVENTIONAL MODELS; DEFECT MODEL; DEFECT SITES; EXPERIMENTAL DATA; MULTI STATE; MULTIPHONONS; RANDOM TELEGRAPH NOISE; RELIABILITY MODELING; SEMI-CLASSICAL APPROXIMATION; SHOCKLEY-READ-HALL THEORIES; TRANSITION RATES; TWO-STATE;

CHARGE TRANSFER; CHARGE TRAPPING; STOCHASTIC SYSTEMS; TELEGRAPH;

STOCHASTIC MODELS;

EID: 84155162964     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.09.002     Document Type: Conference Paper

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