A two-stage model for negative bias temperature instability

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 33-44

  Grasser, T ^a   Kaczer, B ^c   Goes, W ^a   Aichinger, Th ^d   Hehenberger, Ph ^b   Nelhiebel, M ^e  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c IMEC   (Belgium)

^d KAI   (Austria)

^e INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDES; DEPASSIVATION; EXPERIMENTAL DATA; FULL MODEL; NEGATIVE BIAS TEMPERATURE INSTABILITY; NEUTRAL OXYGEN VACANCY; NEW MODEL; OXYNITRIDES; POSITIVELY CHARGED; SILICON DANGLING BOND; TWO STAGE MODEL;

OXYGEN; OXYGEN VACANCIES; SILICON COMPOUNDS; SILICON OXIDES; THERMODYNAMIC STABILITY;

NEGATIVE TEMPERATURE COEFFICIENT;

EID: 70449122224     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173221     Document Type: Conference Paper

References (52)

1. V. Huard, C. Parthasarathy, N. Rallet, C. Guerin, M. Mammase, D. Barge, and C. Ouvrard, "New Characterization and Modeling Approach for NBTI Degradation from Transistor to Product Level," in Proc. IEDM, 2007, pp. 797-800.
2. th Transient in NBTI of pMOSFETs with SiON Dielectric," in Proc. IEDM, 2006, pp. 333-336.
3. B. Kaczer, T. Grasser, Ph.J. Roussel, J. Martin-Martinez, R. O'Connor, B.J. O'Sullivan, and G. Groeseneken, "Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights," in Proc. IRPS, 2008, pp. 20-27.
4. T. Grasser, "Negative Bias Temperature Instability: Modeling Challenges and Perspectives," in Proc. IRPS, 2008, (Tutorial).
5. T. Grasser, B. Kaczer, and W. Goes, "An Energy-Level Perspective of Bias Temperature Instability," in Proc. IRPS, 2008, pp. 28-38.
6. 2, SiON, and High-k Gate Stacks," in IIRW Final Rep., 2008.
7. T. Grasser and B. Kaczer, "Evidence that Two Tightly Coupled Mechanism are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs," IEEE Trans.Electr.Dev., 2009, (in print).
8. B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, "Disorder-Controlled-Kinetics Model for Negative Bias Temperature Instability and its Experimental Verification," in Proc. IRPS, 2005, pp. 381-387.
9. A.T. Krishnan, V. Reddy, S. Chakravarthi, J. Rodriguez, S. John, and S. Krishnan, "NBTI Impact on Transistor and Circuit: Models, Mechanisms and Scaling Effects," in Proc. IEDM, 2003, pp. 1-4.
10. S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta, L. Madhav, D. Saha, and M. A. Alam, "On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?," in Proc. IRPS, 2007, pp. 1-9.
11. T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Goes, and B. Kaczer, "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability," IEEE Trans.Dev.Mat.Rel., vol. 8, no. 3, pp. 526-535, 2008.
12. H. Reisinger, U. Brunner, W. Heinrigs, W. Gustin, and C. Schlünder, "A Comparison of Fast Methods for Measuring NBTI Degradation," IEEE Trans.Dev.Mat.Rel., vol. 7, no. 4, pp. 531-539, 2007.
13. T Measurements for NBTI Degradation: Challenges and Opportunities," in Proc. IEDM, 2007, pp. 1-4.
14. C. Schlünder, R.-P. Vollertsen, W. Gustin, and H. Reisinger, "A Reliable and Accurate Approach to Assess NBTI Behavior of State-Of-The-Art pMOSFETs With Fast-WLR," in Proc. ESSDERC, 2007, pp. 131-134.
15. th-Measurements," in Proc. IRPS, 2006, pp. 448-453.
16. th Instability of pMOSFETs Under Practical Operation Conditions," in Proc. IEDM, 2007, pp. 817-820.
17. V. Huard, M. Denais, and C. Parthasarathy, "NBTI Degradation: From Physical Mechanisms to Modelling," Microelectr.Reliab., vol. 46, no. 1, pp. 1-23, 2006.
18. T. Grasser, W. Goes, V. Sverdlov, and B. Kaczer, "The Universality of NBTI Relaxation and its Implications for Modeling and Characterization," in Proc. IRPS, 2007, pp. 268-280.
19. T. Grasser, B. Kaczer, Ph. Hehenberger, W. Goes, R. O'Connor, H. Reisinger, W. Gustin, and C. Schlünder, "Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability," in Proc. IEDM, 2007, pp. 801-804.
20. Th. Aichinger, M. Nelhiebel, and T. Grasser, "Unambiguous Identifi-cation of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes," in Proc. IRPS, 2009, (in print).
21. M.-F. Li, D. Huang, C. Shen, T. Yang, W.J., W.J. Liu, and Z. Liu, "Understand NBTI Mechanism by Developing Novel Measurement Techniques," IEEE Trans.Dev.Mat.Rel., vol. 8, no. 1, pp. 62-71, March 2008.
22. A. Haggag, W. McMahon, K. Hess, K. Cheng, J. Lee, and J. Lyding, "High-Performance Chip Reliability from Short-Time-Tests," in Proc. IRPS, 2001, pp. 271-279.
23. Ph. Hehenberger, Th. Aichinger, T. Grasser, W. Goes, O. Triebl, B. Kaczer, and M. Nelhiebel, "Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique," in Proc. IRPS, 2009, (in print).
24. T.L. Tewksbury, Relaxation Effects in MOS Devices due to Tunnel Exchange with Near-Interface Oxide Traps, Ph.D. Thesis, MIT, 1992.
25. A.E. Islam, H. Kufluoglu, D. Varghese, S. Mahapatra, and M.A. Alam, "Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation," IEEE Trans.Electr.Dev., vol. 54, no. 9, pp. 2143-2154, 2007.
26. J.F. Zhang, C.Z. Zhao, A.H. Chen, G. Groeseneken, and R. Degraeve, "Hole Traps in Silicon Dioxides - Part I: Properties," IEEE Trans.Electr.Dev., vol. 51, no. 8, pp. 1267-1273, 2004.
27. D.S. Ang, S. Wang, G.A. Du, and Y.Z. Hu, "A Consistent Deep-Level Hole Trapping Model for Negative Bias Temperature Instability," IEEE Trans.Dev.Mat.Rel., vol. 8, no. 1, pp. 22-34, 2008.
28. M.B. Weissman, "1/f Noise and other Slow, Nonexponential Kinetics in Condensed Matter," Rev.Mod.Phys, vol. 60, no. 2, pp. 537-571, 1988.
29. D.M. Fleetwood, H.D. Xiong, Z.-Y. Lu, C.J. Nicklaw, J.A. Felix, R.D. Schrimpf, and S.T. Pantelides, "Unified Model of Hole Trapping, 1/ f Noise, and Thermally Stimulated Current in MOS Devices," IEEE Trans.Electr.Dev., vol. 49, no. 6, pp. 2674-2683, 2002.
30. C.H. Henry and D.V. Lang, "Nonradiative Capture and Recombination by Multiphonon Emission in GaAs and GaP," Phys.Rev.B, vol. 15, no. 2, pp. 989-1016, 1977.
31. M.J. Kirton and M.J. Uren, "Noise in Solid-State Microstructures: A New Perspective on Individual Defects, Interface States and Low-Frequency (1/f) Noise," Adv.Phys, vol. 38, no. 4, pp. 367-486, 1989.
32. S. Makram-Ebeid and M. Lannoo, "Quantum Model for Phonon-Assisted Tunnel Ionization of Deep Levels in a Semiconductor," Phys.Rev.B, vol. 25, no. 10, pp. 6406-6424, 1982.
33. S.D. Ganichev, W. Prettl, and I.N. Yassievich, "Deep Impurity-Center Ionization by Far-Infrared Radiation," Phys.Solid State, vol. 39, no. 1, pp. 1703-1726, 1997.
34. 4: Updates and Additions," J.Electrochem.Soc., vol. 142, no. 7, pp. 2508-2516, 1995.
35. P.M. Lenahan, "Atomic Scale Defects Involved in MOS Reliability Problems," Microelectr.Eng., vol. 69, pp. 173-181, 2003.
36. P.V. Sushko, S. Mukhopadhyay, A.S. Mysovsky, V.B. Sulimov, A. Taga, and A.L. Shluger, "Structure and Properties of Defects in Amorphous Silica: New Insights from Embedded Cluster Calculations," J.Phys.:Condensed Matter, vol. 17, pp. 2115-2140, 2005.
37. A.J. Lelis and T.R. Oldham, "Time Dependence of Switching Oxide Traps," IEEE Trans.Nucl.Science, vol. 41, no. 6, pp. 1835-1843, Dec 1994.
38. 2," Appl.Phys.Lett., vol. 67, no. 15, pp. 2179-2181, 1995.
39. 2," IEEE Trans.Nucl.Science, vol. 49, no. 6, pp. 2667-2673, Dec 2002.
40. A. V. Kimmel, P.V. Sushko, A.L. Shluger, and G. Bersuker, "Positive and Negative Oxygen Vacancies in Amorphous Silica," in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10, R. Sah, J. Zhang, Y. Kamakura, M. Deen, and J. Yota, Eds. ECS Transactions, 2009, (in print).
41. V. Reddy, A.T. Krishnan, A. Marshall, J. Rodriguez, S. Natarajan, T. Rost, and S. Krishnan, "Impact of Negative Bias Temperature Instability on Digital Circuit Reliability," in Proc. IRPS, 2002, pp. 248-254.
42. A.T. Krishnan, C. Chancellor, S. Chakravarthi, P.E. Nicollian, V. Reddy, A. Varghese, R.B. Khamankar, and S. Krishnan, "Material Dependence of Hydrogen Diffusion: Implications for NBTI Degradation," in Proc. IEDM, 2005, pp. 688-691.
43. C.H. Helms and E.H. Poindexter, "The Silicon-Silicon-Dioxide System: Its Microstructure and Imperfections," Rep.Prog.Phys., vol. 57, pp. 791-852, 1994.
44. C. Schlunder, M. Hoffmann, R.-P. Vollertsen, G. Schindler, W. Heinrigs, W. Gustin, and H. Reisinger, "A Novel Multi-Point NBTI Characterization Methodology Using Smart Intermediate Stress (SIS)," in Proc. IRPS, May 2008, pp. 79-86.
45. D. Brisbin and P. Chaparala, "The Effect of the Subthreshold Slope Degradation on NBTI Device Characterization," in IIRW Final Rep., 2008, pp. 96-99.
46. G. Kapila, N. Goyal, V.D. Maheta, C. Olsen, K. Ahmed, and S. Mahapatra, "A Comprehensive Study of Flicker Noise in Plasma Nitrided SiON p-MOSFETs: Process Dependence of Pre-Existing and NBTI Stress Generated Trap Distribution Profiles," in Proc. IEDM, 2008, pp. 103-106.
47. B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche, Ph.J. Roussel, and G. Groeseneken, "NBTI from the Perspective of Defect States with Widely Distributed Time Scales," in Proc. IRPS, 2009.
48. J.P. Campbell, P.M. Lenahan, C.J. Cochrane, A.T. Krishnan, and S. Krishnan, "Atomic-Scale Defects Involved in the Negative-Bias Temperature Instability," IEEE Trans.Dev.Mat.Rel., vol. 7, no. 4, pp. 540-557, 2007.
49. D.B. Brown and N.S. Saks, "Time Dependence of Radiation-Induced Trap Formation in Metal-Oxide-Semiconductor Devices as a Function of Oxide Thickness and Applied Field," J.Appl.Phys., vol. 70, no. 7, pp. 3734-3747, 1991.
50. D.V. Lang and C.H. Henry, "Nonradiative Recombination at Deep Levels in GaAs and GaP by Lattice-Relaxation Multiphonon Emission," Physical Review Letters, vol. 35, no. 22, pp. 1525-1528, 1975.
51. 2Films," Appl.Phys.Lett., vol. 73, no. 15, pp. 2188-2190, 1998.
52. 2 Interface," Phys.Rev.B, vol. 61, no. 12, pp. 8393-8403, 2000.