Impact of hydrogen on recoverable and permanent damage following negative bias temperature stress

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 1063-1068

  Aichinger, T ^a   Puchner, S ^a   Nelhiebel, M ^b   Grasser, T ^c   Hutter, H ^d  

^a Kompetenzzentrum für Automobil und Industrieelektronik ^*  (Austria)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^c INSTITUTE FOR MICROELECTRONICS   (Austria)

^d VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

E center; Hydrogen; NBTI; Oxygen vacancy; Pb center

Indexed keywords

BACK END OF LINES; BARRIER THICKNESS; CHARGE PUMPING; CLASSICAL REACTIONS; ELECTRICAL CHARACTERISTIC; GATE OXIDE; HYDROGEN CONCENTRATION; HYDROGEN INCORPORATION; HYDROGEN RELEASE; HYDROGEN TRANSFER; INDIVIDUAL COMPONENTS; INTERFACE STATE; METALLIZATIONS; MODEL-BASED; NBTI; NEGATIVE BIAS; PB CENTERS; PERMANENT DAMAGE; PMOS DEVICES; SILICON SUBSTRATES; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; TOF SIMS;

GATES (TRANSISTOR); HYDROGEN; OXYGEN; PASSIVATION; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; TITANIUM; TITANIUM OXIDES; VACANCIES;

OXYGEN VACANCIES;

EID: 77957928889     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488672     Document Type: Conference Paper

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