Isolation of NBTI stress generated interface trap and hole-trapping components in PNO p-MOSFETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 2, 2009, Pages 236-242

  Mahapatra, Souvik ^a   Maheta, Vrajesh D ^a   Islam, Ahmad Ehteshamul ^b   Alam, Muhammad Ashraful ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Activation energy; Field acceleration; Hole trapping; Interface traps; Negative bias temperature instability (NBTI); p MOSFET; Plasma oxynitride; Reaction diffusion (R D) model; Time exponent

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; DIFFUSION IN LIQUIDS; HOLE TRAPS; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; NITRIDES; PLASMA APPLICATIONS; PLASMA STABILITY; PLASMAS; THERMODYNAMIC STABILITY; TIME MEASUREMENT;

FIELD ACCELERATION; HOLE TRAPPING; INTERFACE TRAPS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); P-MOSFET; PLASMA OXYNITRIDE; REACTION-DIFFUSION (R-D) MODEL; TIME EXPONENT;

PLASMA DIAGNOSTICS;

EID: 59849096882     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2010569     Document Type: Article

References (36)

1. Y. Mitani, "Influence of nitrogen in ultra-thin SiON on negative bias temperature instability under AC stress," in IEDM Tech. Dig., 2004, pp. 117-120.
2. C. Shen, M. F. Li, C. E. Foo, T. Yang, D. M. Huang, A. Yap, G. S. Samudra, and Y. C. Yeo, "Characterization and physical origin of fast V th transientin NBTI of pMOSFETs with SiON dielectric," in IEDM Tech. Dig., 2006, pp. 333-336.
3. H. Reisinger, O. Blank, W. Heinrigs, A. Muhlhoff, W. Gustin, and C. Schlunder, "Analysis of NBTI degradation- and recovery-behavior based on ultra fast VT measurements," in Proc. Int. Reliab. Phys. Symp. 2006, pp. 448-453.
4. A. T. Krishnan, C. Chancellor, S. Chakravarthi, P. E. Nicollian, V. Reddy, A. Varghese, R. B. Khamankar, and S. Krishnan, "Material dependence of hydrogen diffusion: Implications for NBTI degradation," in IEDM Tech. Dig., 2005, pp. 688-691.
5. D. Varghese, D. Saba, S. Mahapatra, K. Ahmed, F. Nouri, and M. Alam, "On the dispersive versus Arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications," in IEDM Tech. Dig., 2005, pp. 684-687.
6. K. Sakuma, D. Matsushita, K. Muraoka, and Y. Mitani, "Investigation of nitrogen-originated NBTI mechanism in SiON with high-nitrogen concentration," in Proc. Int. Reliab. Phys. Symp., 2006, pp. 454-460.
7. S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta, L. Madhav, D. Saba, and M. A. Alam, "On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?" in Proc. Int. Reliab. Phys. Symp., 2007, pp. 1-9.
8. DLIN technique," in IEDM Tech. Dig., 2007, pp. 809-812.
9. S. Mahapatra and M. A. Alam, "Defect generation in p-MOSFETs under negative-bias stress: An experimental perspective," IEEE Trans. Device Mater. Rel., vol. 8, no. 1, pp. 35-46, Mar. 2008.
10. DLIN technique," IEEE Trans. Electron Devices vol. 55, no. 7, pp. 1630-1638, Jul. 2008.
11. A. E. Islam, G. Gupta, S. Mahapatra, A. Krishnan, K. Ahmed, F. Nouri, A. Oates, and M. A. Alam, "Gate leakage vs. NBTI in plasma nitrided oxides: Characterization, physical principles, and optimization," in IEDM Tech. Dig., 2006, pp. 329-332.
12. C. L. Chen, Y M. Lin, C. J. Wang, and K. Wu, "A new finding on NBTI lifetime model and an investigation on NBTI degradation characteristic for 1.2 nm ultra thin oxide," in Proc. Int. Reliab. Phys. Symp., 2005, pp. 704-705.
13. S. Rangan, N. Mielke, and E. C. C. Yeh, "Universal recovery behavior of negative bias temperature instability," in IEDM Tech. Dig., 2003, pp. 341-344.
14. M. Ershov, S. Saxena, H. Karbasi, S. Winters, S. Minehane, J. Babcock, R. Lindley, P. Clifton, M. Redford, and A. Shibkov, "Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 83, no. 8, pp. 1647-1649, Aug. 2003.
15. A. Haggag, G. Anderson, S. Parihar, D. Burnett, G. Abeln, J. Higman, and M. Moosa, "Understanding SRAM lugh-temperature-operating-life NBTI: Statistics and permanent vs. recoverable damage," in Proc. Int. Reliab. Phys. Symp., 2007, pp. 452-456.
16. V. Huard, C. Parthasarathy, T. Guerin, T. Valentin, E. Pion, M. Mammasse, N. Planes, and L. Camus, "NBTI degradation: From transistor to SRAM arrays," in Proc. Int. Reliab. Phys. Symp., 2008, pp. 289-300.
17. B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, "Disorder controlled kinetics model for negative bias temperature instability and its experimental verification," in Proc. Int. Reliab. Phys. Symp., 2005, pp. 381-387.
18. S. Mahapatra, P. Bharath Kumar, and M. A. Alam, "Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs," IEEE Trans. Electron Devices vol. 51, no. 9, pp. 1371-1379, Sep. 2004.
19. A. E. Islam, H. Kufluoglu, D. Varghese, S. Mahapatra, and M. A. Alain, "Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2143-2154, Sep. 2007.
20. T. Grasser, B. Kaczer, and W. Goes, "An energy-level perspective of bias temperature instability," in Proc. Int. Reliab. Phys. Symp., 2008, pp. 28-38.
21. V. Huard, M. Denais, F. Perrier, N. Revil, C. Parthasarathy, A. Bravaix, and E. Vincent, "A thorough investigation of MOSFETs NBTI degradation," Microelectron. Reliab., vol. 45, no. 1, pp. 83-98, Jan. 2005.
22. D. S. Ang, S. Wang, G. A. Du, and Y. Z. Hu, "A consistent deep-level hole trapping model for negative bias temperature instability," IEEE Trans. Device Mater. Rel., vol. 8, no. 1, pp. 22-34, Mar. 2008.
23. T. L. Yang, M. F. Li, C. Shen, C. H. Ang, Z. Chunxiang, Y. C. Yeo, G. Samudra, S. C. Rustagi, and M. B. Yu, "Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application," in VLSI Symp. Tech. Dig., 2005, pp. 92-93.
24. 2 gate stacks," in IEDM Tech. Dig., 2006, pp. 1-4.
25. J. H. Lee, W. H. Wu, A. E. Islam, M. A. Alam, and A. S. Oates, "Separation method of hole trapping and interface trap generation and their roles in NBTI reaction-diffusion model," in Proc. Int. Reliab. Phys. Symp., 2008, pp. 745-746.
26. P. A. Kraus, K. Z. Ahmed, C. S. Olsen, and F. Nouri, "Physical models for predicting plasma nitrided SiON gate dielectric properties from physical metrology," IEEE Electron Device Lett., vol. 24, no. 9, pp. 559-561, Sep. 2003.
27. C. Olsen, "Two-step post nitridation annealing for lower EOT plasma nitrided gate dielectrics," U.S. Patent 017 596 1A1, Sep. 9, 2004.
28. M. Alam and S. Mahapatra, "A comprehensive model of PMOS NBTI degradation," Microelectron. Reliab., vol. 45, no. 1, pp. 71-81, Jan. 2005.
29. S. Chakravarthi, A. T. Krishnan, V. Reddy, C. F. Machala, and S. Krishnan, "A comprehensive framework for predictive modeling of negative bias temperature instability," in Proc. Int. Reliab. Phys. Symp., 2004, pp. 273-282.
30. A. E. Islam, V. D. Maheta, H. Das, S. Mahapatra, and M. A. Alam, "Mobility degradation due to interface traps in plasma oxynitride PMOS devices," in Proc. Int. Reliab. Phys. Symp., 2008, pp. 87-96.
31. 2 plasma," J. Appl. Phys., vol. 98, no. 2, pp. 024 305-1-024 305-10, Jul. 2005.
32. 2-on-Si structures," J. Appl. Phys., vol. 58, no. 7, pp. 2524-2533, Oct. 1985.
33. 2 interface trap annealing," J. Appl. Phys., vol. 63, no. 12, pp. 5776-5793, Jun. 1988.
34. 2," Phys. Rev. B, Condens. Matter, vol. 61, no. 7, pp. 4417-4420, Feb. 2000.
35. S. Chakravarthi, A. T. Krishnan, V. Reddy, and S. Krishnan, "Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation," Microelectron. Reliab. vol. 47, no. 6, pp. 863-872, Jun. 2007.
36. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang, W. Y. Teo, and L. Chan, "Neighboring effect in nitrogen-enhanced negative bias temperature instability," in Proc. Solid State Devices Mater., 2003, pp. 70-71.