Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and High-k gate stacks

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2008, Pages 91-95

  Grasser, Tibor ^a   Kaczer, Ben ^b   Aichinger, Thomas ^c   Goes, Wolfgang ^a   Nelhiebel, Michael ^d  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b IMEC   (Belgium)

^c Kompetenzzentrum Automobil und Industrie Elektronik Gmbh   (Austria)

^d INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

NEGATIVE BIAS TEMPERATURE INSTABILITY; NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY;

DEFECT CREATION; DRIVING FORCES; HIGH-K GATE STACKS; HOLE-TRAPPING; OXYNITRIDES; STRESS TEMPERATURE; STRESS VOLTAGES; THERMALLY ACTIVATED; TIME-SCALES; TWO-COMPONENT;

SILICA;

EID: 64549133766     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2008.4796094     Document Type: Conference Paper

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