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Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 24, 2010, Pages

Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

(4) Grasser, Tibor a Reisinger, Hans b Wagner, Paul Jürgen a Kaczer, Ben c

a INSTITUTE FOR MICROELECTRONICS (Austria)

b INFINEON TECHNOLOGIES AG (Germany)

c IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78651287908 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.82.245318 Document Type: Article

Times cited : (140)

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