A study of NBTI by the statistical analysis of the properties of individual defects in pMOSFETS

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2009, Pages 30-35

  Reisinger, H ^a   Grasser, T ^b   Schlunder C ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEFECTS; MOSFET DEVICES;

ANALYSIS TECHNIQUES; CAPTURE PROCESS; CAPTURE TIME; EMISSION TIME; NMOSFETS; PMOSFET; POSITIVE CHARGES; PROPERTY; SMALL AREA; STRESS PULSE;

NEGATIVE BIAS TEMPERATURE INSTABILITY;

EID: 77951058313     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2009.5383037     Document Type: Conference Paper

References (12)

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