-
1
-
-
0041340533
-
Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
-
Jul
-
D. K. Schroder and J. A. Babcock, "Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing," J. Appl. Phys., vol. 94, no. 1, pp. 1-18, Jul. 2003.
-
(2003)
J. Appl. Phys
, vol.94
, Issue.1
, pp. 1-18
-
-
Schroder, D.K.1
Babcock, J.A.2
-
2
-
-
10044266222
-
A comprehensive model of PMOS NBTI degradation
-
Jan
-
M. A. Alam and S. Mahapatra, "A comprehensive model of PMOS NBTI degradation," Microelectron. Reliab., vol. 45, no. 1, pp. 71-81, Jan. 2005.
-
(2005)
Microelectron. Reliab
, vol.45
, Issue.1
, pp. 71-81
-
-
Alam, M.A.1
Mahapatra, S.2
-
3
-
-
28844506128
-
NBTI degradation: From physical mechanisms to modelling
-
Jan
-
V. Huard, M. Denais, and C. Parthasarathy, "NBTI degradation: From physical mechanisms to modelling," Microelectron. Reliab., vol. 46, no. 1, pp. 1-23, Jan. 2006.
-
(2006)
Microelectron. Reliab
, vol.46
, Issue.1
, pp. 1-23
-
-
Huard, V.1
Denais, M.2
Parthasarathy, C.3
-
4
-
-
30844464359
-
The negative bias temperature instability in MOS devices: A review
-
Feb.-Apr
-
J. H. Stathis and S. Zafar, "The negative bias temperature instability in MOS devices: A review," Microelectron. Reliab., vol. 46, no. 2-4, pp. 270-286, Feb.-Apr. 2006.
-
(2006)
Microelectron. Reliab
, vol.46
, Issue.2-4
, pp. 270-286
-
-
Stathis, J.H.1
Zafar, S.2
-
5
-
-
0017493207
-
Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
-
May
-
K. O. Jeppson and C. M. Svensson, "Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices," J. Appl. Phys., vol. 48, no. 5, pp. 2004-2014, May 1977.
-
(1977)
J. Appl. Phys
, vol.48
, Issue.5
, pp. 2004-2014
-
-
Jeppson, K.O.1
Svensson, C.M.2
-
6
-
-
0000005489
-
2 interface
-
Feb
-
2 interface," Phys. Rev. B, Condens. Matter, vol. 51, no. 7, pp. 4218-4230, Feb. 1995.
-
(1995)
Phys. Rev. B, Condens. Matter
, vol.51
, Issue.7
, pp. 4218-4230
-
-
Ogawa, S.1
Shiono, N.2
-
7
-
-
3042611436
-
A comprehensive framework for predictive modeling of negative bias temperature instability
-
S. Chakravarthi, A. T. Krishnan, V. Reddy, C. F. Machala, and S. Krishnan, "A comprehensive framework for predictive modeling of negative bias temperature instability," in Proc. IRPS, 2004, pp. 273-282.
-
(2004)
Proc. IRPS
, pp. 273-282
-
-
Chakravarthi, S.1
Krishnan, A.T.2
Reddy, V.3
Machala, C.F.4
Krishnan, S.5
-
8
-
-
33847757101
-
Material dependence of hydrogen, diffusion: Implications for NBTI degradation
-
A. T. Krishnan, C. Chancellor, S. Chakravarthi, P. E. Nicollian, V. Reddy, A. Varghese, R. B. Khamankar, and S. Krishnan, "Material dependence of hydrogen, diffusion: Implications for NBTI degradation," in IEDM Tech. Dig., 2005, pp. 688-691.
-
(2005)
IEDM Tech. Dig
, pp. 688-691
-
-
Krishnan, A.T.1
Chancellor, C.2
Chakravarthi, S.3
Nicollian, P.E.4
Reddy, V.5
Varghese, A.6
Khamankar, R.B.7
Krishnan, S.8
-
9
-
-
34247887177
-
On the dispersive versus Arrhenius temperature activation, of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications
-
Dec
-
D. Varghese, D. Saha, S. Mahapatra, K. Ahmed, F. Nouri, and M. A. Alam, "On the dispersive versus Arrhenius temperature activation, of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications," in IEDM Tech. Dig., Dec. 2005, pp. 1-4.
-
(2005)
IEDM Tech. Dig
, pp. 1-4
-
-
Varghese, D.1
Saha, D.2
Mahapatra, S.3
Ahmed, K.4
Nouri, F.5
Alam, M.A.6
-
10
-
-
46049113552
-
th transient in NBTI of pMOSFETs with SiON dielectric
-
th transient in NBTI of pMOSFETs with SiON dielectric," in IEDM Tech. Dig., 2006, pp. 333-336.
-
(2006)
IEDM Tech. Dig
, pp. 333-336
-
-
Shen, C.1
Li, M.-F.2
Foo, C.E.3
Yang, T.4
Huang, D.M.5
Yap, A.6
Samudra, G.S.7
Yeo, Y.-C.8
-
11
-
-
20944450469
-
-
S. Zafar, Statistical mechanics based model for negative bias temperature instability induced degradation, J. Appl. Phys., 97, no. 10, pp. 103 709-1-103 709-9, May 2005.
-
S. Zafar, "Statistical mechanics based model for negative bias temperature instability induced degradation," J. Appl. Phys., vol. 97, no. 10, pp. 103 709-1-103 709-9, May 2005.
-
-
-
-
12
-
-
42549097470
-
TCAD modeling of negative bias temperature instability
-
Monterey, CA, Sep
-
T. Grasser, R. Entner, O. Triebl, H. Enichlmair, and R. Minixhofer, "TCAD modeling of negative bias temperature instability," in Proc. SISPAD, Monterey, CA, Sep. 2006, pp. 330-333.
-
(2006)
Proc. SISPAD
, pp. 330-333
-
-
Grasser, T.1
Entner, R.2
Triebl, O.3
Enichlmair, H.4
Minixhofer, R.5
-
13
-
-
10044226987
-
A thorough investigation of MOSFETs NBTI degradation
-
Jan
-
V. Huard, M. Denais, F. Perrier, N. Revil, C. Parthasarathy, A. Bravaix, and E. Vincent, "A thorough investigation of MOSFETs NBTI degradation," Microelectron. Reliab., vol. 45, no. 1, pp. 83-98, Jan. 2005.
-
(2005)
Microelectron. Reliab
, vol.45
, Issue.1
, pp. 83-98
-
-
Huard, V.1
Denais, M.2
Perrier, F.3
Revil, N.4
Parthasarathy, C.5
Bravaix, A.6
Vincent, E.7
-
14
-
-
27744444546
-
Fast DNBTI components in p-MOSFET with SiON dielectric
-
Nov
-
T. Yang, C. Shen, M.-F. Li, C. H. Ang, C. X. Zhu, Y.-C. Yeo, G. Samudra, S. C. Rustagi, M. B. Yu, and D.-L. Kwong, "Fast DNBTI components in p-MOSFET with SiON dielectric," IEEE Electron Device Lett, vol. 26, no. 11, pp. 826-828, Nov. 2005.
-
(2005)
IEEE Electron Device Lett
, vol.26
, Issue.11
, pp. 826-828
-
-
Yang, T.1
Shen, C.2
Li, M.-F.3
Ang, C.H.4
Zhu, C.X.5
Yeo, Y.-C.6
Samudra, G.7
Rustagi, S.C.8
Yu, M.B.9
Kwong, D.-L.10
-
15
-
-
23844493372
-
2 interface
-
Aug
-
2 interface," IEEE Electron Device Lett., vol. 26, no. 8, pp. 572-574, Aug. 2005.
-
(2005)
IEEE Electron Device Lett
, vol.26
, Issue.8
, pp. 572-574
-
-
Varghese, D.1
Mahapatra, S.2
Alam, M.A.3
-
16
-
-
17044380280
-
-
M. Houssa, M. Aoulaiche, S. De Gendt, G. Groeseneken, M. M. Heyns, and A. Stesmans, Reaction-dispersive proton transport model for negative bias temperature instabilities, Appl. Phys. Lett., 86, no. 9, pp. 093 506-1-093 506-3, Feb. 2005.
-
M. Houssa, M. Aoulaiche, S. De Gendt, G. Groeseneken, M. M. Heyns, and A. Stesmans, "Reaction-dispersive proton transport model for negative bias temperature instabilities," Appl. Phys. Lett., vol. 86, no. 9, pp. 093 506-1-093 506-3, Feb. 2005.
-
-
-
-
17
-
-
28744447129
-
Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification, in
-
B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, "Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification," in. Proc. IRPS, 2005, pp. 381-387.
-
(2005)
Proc. IRPS
, pp. 381-387
-
-
Kaczer, B.1
Arkhipov, V.2
Degraeve, R.3
Collaert, N.4
Groeseneken, G.5
Goodwin, M.6
-
18
-
-
17444381932
-
-
L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, Physical mechanisms of negative-bias temperature instability, Appl. Phys. Lett., 86, no. 14, pp. 142 103-1-142 103-3, Apr. 2005.
-
L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, "Physical mechanisms of negative-bias temperature instability," Appl. Phys. Lett., vol. 86, no. 14, pp. 142 103-1-142 103-3, Apr. 2005.
-
-
-
-
19
-
-
0000616215
-
Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
-
Aug
-
J. Kakalios, R. A. Street, and W. B. Jackson, "Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon," Phys. Rev. Lett., vol. 59, no. 9, pp. 1037-1040, Aug. 1987.
-
(1987)
Phys. Rev. Lett
, vol.59
, Issue.9
, pp. 1037-1040
-
-
Kakalios, J.1
Street, R.A.2
Jackson, W.B.3
-
20
-
-
0001561580
-
Hydrogen migration, in polycrystalline silicon
-
Mar
-
N. H. Nickel, W. B. Jackson, and J. Walker, "Hydrogen migration, in polycrystalline silicon," Phys. Rev. B, Condens. Matter, vol. 53, no. 12, pp. 7750-7761, Mar. 1996.
-
(1996)
Phys. Rev. B, Condens. Matter
, vol.53
, Issue.12
, pp. 7750-7761
-
-
Nickel, N.H.1
Jackson, W.B.2
Walker, J.3
-
21
-
-
0000947294
-
Simple approximate solution to continuous-time random-walk transport
-
Jan
-
F. B. McLean and G. A. Ausman, "Simple approximate solution to continuous-time random-walk transport," Phys. Rev. B, Condens. Matter, vol. 15, no. 2, pp. 1052-1061, Jan. 1977.
-
(1977)
Phys. Rev. B, Condens. Matter
, vol.15
, Issue.2
, pp. 1052-1061
-
-
McLean, F.B.1
Ausman, G.A.2
-
22
-
-
33747312283
-
Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field
-
Oct
-
D. B. Brown and N. S. Saks, "Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field," J. Appl. Phys., vol. 70, no. 7, pp. 3734-3747, Oct. 1991.
-
(1991)
J. Appl. Phys
, vol.70
, Issue.7
, pp. 3734-3747
-
-
Brown, D.B.1
Saks, N.S.2
-
23
-
-
0000937743
-
Multiple-trapping model of anomalous transit-time dispersion in a-Se
-
Nov
-
J. Noolandi, "Multiple-trapping model of anomalous transit-time dispersion in a-Se," Phys. Rev. B, Condens. Matter, vol. 16, no. 10, pp. 4466-4473, Nov. 1977.
-
(1977)
Phys. Rev. B, Condens. Matter
, vol.16
, Issue.10
, pp. 4466-4473
-
-
Noolandi, J.1
-
24
-
-
0020160041
-
Transient photoconductivity and photo-induced optical absorption in amorphous semiconductors
-
J. Orenstein, M. A. Kastner, and V. Vaninov, "Transient photoconductivity and photo-induced optical absorption in amorphous semiconductors," Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop., vol.46, no. 1,pp. 23-62," 1982.
-
(1982)
Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop
, vol.46
, Issue.1
, pp. 23-62
-
-
Orenstein, J.1
Kastner, M.A.2
Vaninov, V.3
-
25
-
-
0020089464
-
Drift and diffusion in materials with traps
-
V. I. Arkhipov and A. I. Rudenko, "Drift and diffusion in materials with traps," Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop., vol. 45, no. 2, pp. 189-207, 1982.
-
(1982)
Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop
, vol.45
, Issue.2
, pp. 189-207
-
-
Arkhipov, V.I.1
Rudenko, A.I.2
-
26
-
-
13444309341
-
Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide
-
Dec
-
M. Denais, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, N. Revil, and A. Bravaix, "Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide," IEEE Trans. Device Mater. Rel., vol. 4, no. 4, pp. 715-722, Dec. 2004.
-
(2004)
IEEE Trans. Device Mater. Rel
, vol.4
, Issue.4
, pp. 715-722
-
-
Denais, M.1
Huard, V.2
Parthasarathy, C.3
Ribes, G.4
Perrier, F.5
Revil, N.6
Bravaix, A.7
-
27
-
-
34247847473
-
th-measurements
-
th-measurements," in Proc. IRPS, 2006, pp. 448-453.
-
(2006)
Proc. IRPS
, pp. 448-453
-
-
Reisinger, H.1
Blank, O.2
Heinrigs, W.3
Mühlhoff, A.4
Gustin, W.5
Schlünder, C.6
-
28
-
-
0037972043
-
Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors
-
M. Ershov, R. Lindley, S. Saxena, A. Shibkov, S. Minehane, J. Babcock, S. Winters, H. Karbasi, T. Yamashita, P. Clifton, and M. Redford, "Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors," in Proc. IRPS, 2003, pp. 606-607.
-
(2003)
Proc. IRPS
, pp. 606-607
-
-
Ershov, M.1
Lindley, R.2
Saxena, S.3
Shibkov, A.4
Minehane, S.5
Babcock, J.6
Winters, S.7
Karbasi, H.8
Yamashita, T.9
Clifton, P.10
Redford, M.11
-
29
-
-
34548740258
-
On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?
-
S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta, L. Madhav, D. Saha, and M. A. Alam, "On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?" in Proc. IRPS, 2007, pp. 1-9.
-
(2007)
Proc. IRPS
, pp. 1-9
-
-
Mahapatra, S.1
Ahmed, K.2
Varghese, D.3
Islam, A.E.4
Gupta, G.5
Madhav, L.6
Saha, D.7
Alam, M.A.8
-
30
-
-
34548804466
-
The universality of NBTI relaxation and its implications for modeling and characterization
-
T. Grasser, W. Gös, V. Sverdlov, and B. Kaczer, "The universality of NBTI relaxation and its implications for modeling and characterization," in Proc. IRPS, 2007, pp. 268-280.
-
(2007)
Proc. IRPS
, pp. 268-280
-
-
Grasser, T.1
Gös, W.2
Sverdlov, V.3
Kaczer, B.4
-
31
-
-
0028384568
-
Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs
-
Mar
-
T. L. Tewksbury and H.-S. Lee, "Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs," IEEE J. Solid-State Circuits, vol. 29, no. 3, pp. 239-252, Mar. 1994.
-
(1994)
IEEE J. Solid-State Circuits
, vol.29
, Issue.3
, pp. 239-252
-
-
Tewksbury, T.L.1
Lee, H.-S.2
-
32
-
-
21444434901
-
Electric-field dependence of negative-bias temperature instability
-
J. Ushio, Y. Okuyama, and T. Maruizumi, "Electric-field dependence of negative-bias temperature instability," J. Appl. Phys., vol. 97, no. 8, pp. 1-3, 2005.
-
(2005)
J. Appl. Phys
, vol.97
, Issue.8
, pp. 1-3
-
-
Ushio, J.1
Okuyama, Y.2
Maruizumi, T.3
-
33
-
-
0003174887
-
-
C. G. Van De Walle, Stretched-exponential relaxation modeled without invoking statistical distributions, Phys. Rev. B, Condens. Matter, 53, no. 17, pp. 11 292-11 295, May 1996.
-
C. G. Van De Walle, "Stretched-exponential relaxation modeled without invoking statistical distributions," Phys. Rev. B, Condens. Matter, vol. 53, no. 17, pp. 11 292-11 295, May 1996.
-
-
-
-
34
-
-
0012722325
-
Influence of hydrogen and oxygen plasma treatments on grain-boundary defects in polyciystalline silicon
-
N. H. Nickel, A. Yin, and S. J. Fonash, "Influence of hydrogen and oxygen plasma treatments on grain-boundary defects in polyciystalline silicon," Appl. Phys. Lett., vol. 65, no. 24, pp. 3099-3101, 1994.
-
(1994)
Appl. Phys. Lett
, vol.65
, Issue.24
, pp. 3099-3101
-
-
Nickel, N.H.1
Yin, A.2
Fonash, S.J.3
-
35
-
-
0000019521
-
2 interface
-
Mar
-
2 interface," Phys. Rev. B, Condens. Matter, vol. 61, no. 12, pp. 8393-8403, Mar. 2000.
-
(2000)
Phys. Rev. B, Condens. Matter
, vol.61
, Issue.12
, pp. 8393-8403
-
-
Stesmans, A.1
-
36
-
-
36449000462
-
2 (4 nm-6 nm)-Si interfaces during negative-bias temperature aging
-
Feb
-
2 (4 nm-6 nm)-Si interfaces during negative-bias temperature aging," J. Appl. Phys., vol. 77, no. 3, pp. 1137-1148, Feb. 1995.
-
(1995)
J. Appl. Phys
, vol.77
, Issue.3
, pp. 1137-1148
-
-
Ogawa, S.1
Shimaya, M.2
Shiono, N.3
-
37
-
-
33646147793
-
-
A. T. Krishnan, S. Chakravarthi, P. Nicollian, V. Reddy, and S. Krishnan, Negative bias temperature instability mechanism: The role of molecular hydrogen, Appl. Phys. Lett, 88, no. 15, pp. 153 518-1-153 518-3, Apr. 2006.
-
A. T. Krishnan, S. Chakravarthi, P. Nicollian, V. Reddy, and S. Krishnan, "Negative bias temperature instability mechanism: The role of molecular hydrogen," Appl. Phys. Lett, vol. 88, no. 15, pp. 153 518-1-153 518-3, Apr. 2006.
-
-
-
-
38
-
-
0842266651
-
A critical examination of the mechanics of dynamic NBTI for PMOSFETs
-
M. A. Alam, "A critical examination of the mechanics of dynamic NBTI for PMOSFETs," in IEDM Tech. Dig., 2003, pp. 345-348.
-
(2003)
IEDM Tech. Dig
, pp. 345-348
-
-
Alam, M.A.1
-
39
-
-
33646400607
-
-
J. B. Yang, T. P. Chen, S. S. Tan, and L. Chan, Analytical reaction-diffusion model and the modeling of nitrogen-enhanced negative bias temperature instability, Appl. Phys. Lett., 88, no. 17, pp. 172 109-1-172 109-3, Apr. 2006.
-
J. B. Yang, T. P. Chen, S. S. Tan, and L. Chan, "Analytical reaction-diffusion model and the modeling of nitrogen-enhanced negative bias temperature instability," Appl. Phys. Lett., vol. 88, no. 17, pp. 172 109-1-172 109-3, Apr. 2006.
-
-
-
-
40
-
-
33646048788
-
Theory of interface-ttap-induced NBTI degradation for reduced cross section MOSFETs
-
May
-
H. Kufluoglu and M. A. Alam, "Theory of interface-ttap-induced NBTI degradation for reduced cross section MOSFETs," IEEE Trans. Electron. Devices, vol. 53, no. 5, pp. 1120-1130, May 2006.
-
(2006)
IEEE Trans. Electron. Devices
, vol.53
, Issue.5
, pp. 1120-1130
-
-
Kufluoglu, H.1
Alam, M.A.2
-
41
-
-
32844457306
-
On quasi-saturation of negative bias temperature degradation
-
M. A. Alam and H. Kufluoglu, "On quasi-saturation of negative bias temperature degradation," ECS Trans., vol. 1, no. 1, pp. 139-145, 2005.
-
(2005)
ECS Trans
, vol.1
, Issue.1
, pp. 139-145
-
-
Alam, M.A.1
Kufluoglu, H.2
-
42
-
-
34548781066
-
NBTI: A simple view of a complex phenomena
-
Tutorial
-
M. A. Alam, "NBTI: A simple view of a complex phenomena," in Proc. IRPS, 2006, pp. 191.1-191.22. Tutorial.
-
(2006)
Proc. IRPS
-
-
Alam, M.A.1
-
44
-
-
34247881985
-
A comprehensive model for PMOS NBTI degradation: Recent progress
-
Jun
-
M. A. Alam, H. Kufluoglu, D. Varghese, and S. Mahapatra, "A comprehensive model for PMOS NBTI degradation: Recent progress," Microelectron. Reliab., vol. 47, no. 6, pp. 853-862, Jun. 2007.
-
(2007)
Microelectron. Reliab
, vol.47
, Issue.6
, pp. 853-862
-
-
Alam, M.A.1
Kufluoglu, H.2
Varghese, D.3
Mahapatra, S.4
-
45
-
-
33748120446
-
Negative bias temperature instability: Basics/modeling
-
Tutorial
-
M. A. Alam, "Negative bias temperature instability: Basics/modeling," in Proc. IRPS, 2005, pp. 211.1-211.22. (Tutorial).
-
(2005)
Proc. IRPS
-
-
Alam, M.A.1
-
46
-
-
40549133369
-
-
private communications
-
S. Zafar, private communications.
-
-
-
Zafar, S.1
-
47
-
-
0141508296
-
Anomalous transit-time dispersion in amorphous solids
-
Sep
-
H. Scher and E. W. Montroll, "Anomalous transit-time dispersion in amorphous solids," Phys. Rev. B, Condens. Matter, vol. 12, no. 6, pp. 2455-2477, Sep. 1975.
-
(1975)
Phys. Rev. B, Condens. Matter
, vol.12
, Issue.6
, pp. 2455-2477
-
-
Scher, H.1
Montroll, E.W.2
-
48
-
-
0029545726
-
Trap-controlled and hopping modes of transport and recombination: Similarities and differences
-
V. I. Arkhipov, "Trap-controlled and hopping modes of transport and recombination: Similarities and differences," in Proc. ISEIM, 1995, pp. 271-274.
-
(1995)
Proc. ISEIM
, pp. 271-274
-
-
Arkhipov, V.I.1
-
49
-
-
0000178481
-
Equivalence of multiple-trapping model and timedependent random walk
-
Nov
-
J. Noolandi, "Equivalence of multiple-trapping model and timedependent random walk," Phys. Rev. B, Condens. Matter, vol. 16, no. 10, pp. 4474-4479, Nov. 1977.
-
(1977)
Phys. Rev. B, Condens. Matter
, vol.16
, Issue.10
, pp. 4474-4479
-
-
Noolandi, J.1
-
50
-
-
0001275223
-
Theory of trap-controlled transient photoconduction
-
Sep
-
F. W. Schmidlin, "Theory of trap-controlled transient photoconduction," Phys. Rev. B, Condens. Matter, vol. 16, no. 6, pp. 2362-2385, Sep. 1977.
-
(1977)
Phys. Rev. B, Condens. Matter
, vol.16
, Issue.6
, pp. 2362-2385
-
-
Schmidlin, F.W.1
-
51
-
-
0001586690
-
Hydrogen transport in amorphous silicon
-
Mar
-
W. B. Jackson and C. C. Tsai, "Hydrogen transport in amorphous silicon," Phys. Rev. B, Condens. Matter, vol. 45, no. 12, pp. 6564-6580, Mar. 1992.
-
(1992)
Phys. Rev. B, Condens. Matter
, vol.45
, Issue.12
, pp. 6564-6580
-
-
Jackson, W.B.1
Tsai, C.C.2
-
52
-
-
0020088174
-
Drift and diffusion in materials with traps: Quasi-equilibrium transport regime
-
A. I. Rudenko and V. I. Arkhipov, "Drift and diffusion in materials with traps: Quasi-equilibrium transport regime," Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop., vol. 45, no. 2, pp. 177-187, 1982.
-
(1982)
Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop
, vol.45
, Issue.2
, pp. 177-187
-
-
Rudenko, A.I.1
Arkhipov, V.I.2
-
53
-
-
84927349273
-
An adiabatic model of dispersive hopping transport
-
V. I. Arkhipov and H. Bässler, "An adiabatic model of dispersive hopping transport," Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop., vol. 68, no. 4, pp. 425-435, 1993.
-
(1993)
Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop
, vol.68
, Issue.4
, pp. 425-435
-
-
Arkhipov, V.I.1
Bässler, H.2
-
54
-
-
0000509253
-
Connection between the Meyer-Neldel relation and multiple-ttapping transport
-
Aug
-
W. B. Jackson, "Connection between the Meyer-Neldel relation and multiple-ttapping transport," Phys. Rev. B, Condens. Matter, vol. 38, no. 5, pp. 3595-3598, Aug. 1988.
-
(1988)
Phys. Rev. B, Condens. Matter
, vol.38
, Issue.5
, pp. 3595-3598
-
-
Jackson, W.B.1
-
55
-
-
17444419352
-
-
B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, Temperature dependence of the negative bias temperature instability in the framework of dispersive transport, Appl. Phys. Lett., 86, no. 14, pp. 143 506-1-143 506-3, Apr. 2005.
-
B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, "Temperature dependence of the negative bias temperature instability in the framework of dispersive transport," Appl. Phys. Lett., vol. 86, no. 14, pp. 143 506-1-143 506-3, Apr. 2005.
-
-
-
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