Modeling random telegraph signals in the gate current of metal-oxide-semiconductor field effect transistors after oxide breakdown

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 703-708

  Avellan A ^a   Schroeder, D ^a   Krautschneider, W ^a  

^a HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; OXIDATION; TELEGRAPH;

RANDOM TELEGRAPH SIGNALS (RTS);

MOSFET DEVICES;

EID: 0041339835     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579134     Document Type: Article

References (22)

1. M. J. Kirton and M. J. Uren, Adv. Phys. 38, 367 (1989).
2. M. Schulz, J. Appl. Phys. 74, 2649 (1993).
3. H. H. Mueller and M. Schulz, J. Mater. Sci.: Mater. Electron. 6, 65 (1995).
4. Z. Çelik Butler, P. Vasina, and N. V. Amarasinghe, IEEE Trans. Electron Devices 47, 646 (2000).
5. N. V. Amarasinghe, Z. Çelik Butler, and A. Keshavarz, J. Appl. Phys. 89, 5526 (2001).
6. N. B. Lukyanchikova, M. V. Petrichuk, N. P. Garbar, E. Simoen, and C. Claeys, Appl. Phys. A: Mater. Sci. Process. 70, 345 (2000).
7. K. R. Farmer, C. T. Rogers, and R. A. Buhrman, Phys. Rev. Lett. 58, 2255 (1987).
8. K. R. Farmer and R. A. Buhrman, Semicond. Sci. Technol. 4, 1084 (1989).
9. M. O. Andersson, Z. Xiao, S. Norrman, and O. Engström, Phys. Rev. B 41, 9836 (1990).
10. N. B. Lukyanchikova, M. V. Petrichuk, N. P. Garbar, E. Simoen, and C. Claeys, in 15th International Conference on Noise in Physical Systems and l/f Fluctuations, edited by C. Surya (Bentham Press, London, UK, 1999), pp. 344-347.
11. M.-J. Chen and M.-P. Lu, Appl. Phys. Lett. 81, 3488 (2002).
12. J.-Q. Lü and F. Koch, Jpn. J. Appl. Phys., Part 1 35, 826 (1996).
13. M. von Haartman, M. Sandén, and M. Östling, J. Appl. Phys. 92, 4414 (2002).
14. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, IEEE Trans. Electron Devices 36, 1217 (1989).
15. B. Kaczer, R. Degraeve, A. De Keersgieter, K. Van de Mieroop, V. Simons, and G. Groeseneken, IEEE Trans. Electron Devices 49, 507 (2002).
16. A. Avellan, W. Krautschneider, and B. Sell, in 16th International Conference on Noise in Physical Systems and 1/f Fluctuations, edited by G. Bosman (World Scientific, Singapore, 2001), pp. 375-378.
17. W. Shockley and W. T. Read, Jr., Phys. Rev. 87, 835 (1952).
18. C. H. Henry and D. V. Lang, Phys. Rev. B 15, 989 (1977).
19. M. Isler and D. Liebig, Phys. Rev. B 61, 7483 (2000).
20. J. H. Scofield, N. Borland, and D. M. Fleetwood, Appl. Phys. Lett. 76, 3248 (2000).
21. R. van Langevelde and F. M. Klaassen, Solid-State Electron. 44, 409 (2000).
22. J. S. Blakemore, Solid-State Electron. 25, 1067 (1982).